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Results:
1-7
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Results: 7
Authors:
Sreseli, OM
Kovalev, DI
Bellyakov, LV
Polisski, G
Citation: Om. Sreseli et al., Effect of nanocrystallite anisotropy on porous silicon layer photoluminescence, IAN FIZ, 65(2), 2001, pp. 295-297
Authors:
Zinov'ev, NN
Andrianov, AV
Nekrasov, VY
Petrovskii, VA
Belyakov, LV
Sreseli, OM
Hill, G
Chamberlain, JM
Citation: Nn. Zinov'Ev et al., Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures, JETP LETTER, 74(2), 2001, pp. 100-102
Authors:
Goryachev, DN
Belyakov, LV
Sreseli, OM
Citation: Dn. Goryachev et al., On the mechanism of porous silicon formation, SEMICONDUCT, 34(9), 2000, pp. 1090-1093
Authors:
Goryachev, DN
Polisskii, G
Sreseli, OM
Citation: Dn. Goryachev et al., Mechanisms of transport and injection of carriers into a porous silicon: Electroluminescence in electrolytes, SEMICONDUCT, 34(2), 2000, pp. 221-227
Authors:
Belyakov, LV
Goryachev, DN
Sreseli, OM
Citation: Lv. Belyakov et al., Photoresponse and electroluminescence of silicon-< porous silicon >-< chemically deposited metal > structures, SEMICONDUCT, 34(11), 2000, pp. 1334-1337
Authors:
Slobodchikov, SV
Goryachev, DN
Salikhov, KM
Sreseli, OM
Citation: Sv. Slobodchikov et al., Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them, SEMICONDUCT, 33(3), 1999, pp. 339-342
Authors:
Nekrasov, VY
Belyakov, LV
Sreseli, OM
Zinov'ev, NN
Citation: Vy. Nekrasov et al., Donor-acceptor photoluminescence of weakly compensated GaN : Mg, SEMICONDUCT, 33(12), 1999, pp. 1284-1290
Risultati:
1-7
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