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Results:
1-16
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Results: 16
Authors:
Torpo, L
Marlo, M
Staab, TEM
Nieminen, RM
Citation: L. Torpo et al., Comprehensive ab initio study of properties of monovacancies and antisitesin 4H-SiC, J PHYS-COND, 13(28), 2001, pp. 6203-6231
Authors:
Gebauer, J
Krause-Rehberg, R
Domke, C
Ebert, P
Urban, K
Staab, TEM
Citation: J. Gebauer et al., Direct identification of As vacancies in GaAs using positron annihilation calibrated by scanning tunneling microscopy - art. no. 045203, PHYS REV B, 6304(4), 2001, pp. 5203
Authors:
Staab, TEM
Nieminen, RM
Gebauer, J
Krause-Rehberg, R
Luysberg, M
Haugk, M
Frauenheim, T
Citation: Tem. Staab et al., Do arsenic interstitials really exist in As-rich GaAs? art. no. 045504, PHYS REV L, 8704(4), 2001, pp. 5504
Authors:
Leipner, HS
Hubner, CG
Staab, TEM
Haugk, M
Sieck, A
Krause-Rehberg, R
Frauenheim, T
Citation: Hs. Leipner et al., Vacancy clusters in plastically deformed semiconductors, J PHYS-COND, 12(49), 2000, pp. 10071-10078
Authors:
Gebauer, J
Krause-Rehberg, R
Staab, TEM
Citation: J. Gebauer et al., Lifetime of positrons in the GaAs lattice, PHYS ST S-B, 220(1), 2000, pp. R1-R3
Authors:
Haugk, M
Elsner, J
Frauenheim, T
Staab, TEM
Latham, CD
Jones, R
Leipner, HS
Heine, T
Seifert, G
Sternberg, M
Citation: M. Haugk et al., Structures, energetics and electronic properties of complex III-V semiconductor systems, PHYS ST S-B, 217(1), 2000, pp. 473-511
Authors:
Staab, TEM
Zschech, E
Krause-Rehberg, R
Citation: Tem. Staab et al., Positron lifetime measurements for characterization of nano-structural changes in the age hardenable AlCuMg 2024 alloy, J MATER SCI, 35(18), 2000, pp. 4667-4672
Authors:
Gebauer, J
Borner, F
Krause-Rehberg, R
Staab, TEM
Bauer-Kugelmann, W
Kogel, G
Triftshauser, W
Specht, P
Lutz, RC
Weber, ER
Luysberg, M
Citation: J. Gebauer et al., Defect identification in GaAs grown at low temperatures by positron annihilation, J APPL PHYS, 87(12), 2000, pp. 8368-8379
Authors:
Staab, TEM
Krause-Rehberg, R
Vetter, B
Kieback, B
Citation: Tem. Staab et al., The influence of microstructure on the sintering process in crystalline metal powders investigated by positron lifetime spectroscopy: I. Electrolyticand spherical copper powders, J PHYS-COND, 11(7), 1999, pp. 1757-1786
Authors:
Staab, TEM
Krause-Rehberg, R
Vetter, B
Kieback, B
Lange, G
Klimanek, P
Citation: Tem. Staab et al., The influence of microstructure on the sintering process in crystalline metal powders investigated by positron lifetime spectroscopy: II. Tungsten powders with different powder-particle sizes, J PHYS-COND, 11(7), 1999, pp. 1787-1806
Authors:
Staab, TEM
Krause-Rehberg, R
Vetter, B
Kieback, B
Citation: Tem. Staab et al., The influence of microstructure on the sintering process in crystalline metal powders investigated by positron lifetime spectroscopy: III. Nickel reduction powder, J PHYS-COND, 11(7), 1999, pp. 1807-1822
Authors:
Staab, TEM
Haugk, M
Sieck, A
Frauenheim, T
Leipner, HS
Citation: Tem. Staab et al., Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies, PHYSICA B, 274, 1999, pp. 501-504
Authors:
Gebauer, J
Lausmann, M
Staab, TEM
Krause-Rehberg, R
Hakala, M
Puska, MJ
Citation: J. Gebauer et al., Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs, PHYS REV B, 60(3), 1999, pp. 1464-1467
Authors:
Staab, TEM
Haugk, M
Frauenheim, T
Leipner, HS
Citation: Tem. Staab et al., Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies, PHYS REV L, 83(26), 1999, pp. 5519-5522
Authors:
Leipner, HS
Hubner, CG
Staab, TEM
Haugk, M
Krause-Rehberg, R
Citation: Hs. Leipner et al., Positron annihilation at dislocations and related point defects in semiconductors, PHYS ST S-A, 171(1), 1999, pp. 377-382
Authors:
Staab, TEM
Krause-Rehberg, R
Kieback, B
Citation: Tem. Staab et al., Positron annihilation in fine-grained materials and fine powders-an application to the sintering of metal powders, J MATER SCI, 34(16), 1999, pp. 3833-3851
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