Authors:
Moore, KT
Stach, EA
Howe, JM
Elbert, DC
Veblen, DR
Citation: Kt. Moore et al., A tilting procedure to enhance compositional contrast and reduce residual diffraction contrast in energy-filtered TEM imaging of planar interfaces, MICRON, 33(1), 2002, pp. 39-51
Authors:
Takeuchi, I
Chang, K
Sharma, RP
Bendersky, LA
Chang, H
Xiang, XD
Stach, EA
Song, CY
Citation: I. Takeuchi et al., Microstructural properties of (Ba, Sr)TiO3 films fabricated from BaF2/SrF2/TiO2 amorphous multilayers using the combinatorial precursor method, J APPL PHYS, 90(5), 2001, pp. 2474-2478
Citation: Ea. Stach et R. Hull, Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface, APPL PHYS L, 79(3), 2001, pp. 335-337
Authors:
Dannenberg, R
Stach, EA
Groza, JR
Dresser, BJ
Citation: R. Dannenberg et al., In-situ TEM observations of abnormal grain growth, coarsening, and substrate de-wetting in nanocrystalline Ag thin films, THIN SOL FI, 370(1-2), 2000, pp. 54-62
Authors:
Stach, EA
Kelsch, M
Nelson, EC
Wong, WS
Sands, T
Cheung, NW
Citation: Ea. Stach et al., Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off, APPL PHYS L, 77(12), 2000, pp. 1819-1821
Authors:
Moore, KT
Howe, JM
Veblen, DR
Murray, TM
Stach, EA
Citation: Kt. Moore et al., Analysis of electron intensity as a function of aperture size in energy-filtered transmission electron microscope imaging, ULTRAMICROS, 80(3), 1999, pp. 221-236
Authors:
Hull, R
Stach, EA
Tromp, R
Ross, F
Reuter, M
Citation: R. Hull et al., Interactions of moving dislocations in semiconductors with point, line andplanar defects, PHYS ST S-A, 171(1), 1999, pp. 133-146