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Results: 1-10 |
Results: 10

Authors: Moore, KT Stach, EA Howe, JM Elbert, DC Veblen, DR
Citation: Kt. Moore et al., A tilting procedure to enhance compositional contrast and reduce residual diffraction contrast in energy-filtered TEM imaging of planar interfaces, MICRON, 33(1), 2002, pp. 39-51

Authors: Stach, EA Freeman, T Minor, AM Owen, DK Cumings, J Wall, MA Chraska, T Hull, R Morris, JW Zettl, A Dahmen, U
Citation: Ea. Stach et al., Development of a nanoindenter for in situ transmission electron microscopy, MICROS MICR, 7(6), 2001, pp. 507-517

Authors: Takeuchi, I Chang, K Sharma, RP Bendersky, LA Chang, H Xiang, XD Stach, EA Song, CY
Citation: I. Takeuchi et al., Microstructural properties of (Ba, Sr)TiO3 films fabricated from BaF2/SrF2/TiO2 amorphous multilayers using the combinatorial precursor method, J APPL PHYS, 90(5), 2001, pp. 2474-2478

Authors: Stach, EA Hull, R
Citation: Ea. Stach et R. Hull, Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface, APPL PHYS L, 79(3), 2001, pp. 335-337

Authors: Minor, AM Morris, JW Stach, EA
Citation: Am. Minor et al., Quantitative in situ nanoindentation in an electron microscope, APPL PHYS L, 79(11), 2001, pp. 1625-1627

Authors: Dannenberg, R Stach, EA Groza, JR Dresser, BJ
Citation: R. Dannenberg et al., In-situ TEM observations of abnormal grain growth, coarsening, and substrate de-wetting in nanocrystalline Ag thin films, THIN SOL FI, 370(1-2), 2000, pp. 54-62

Authors: Stach, EA Schwarz, KW Hull, R Ross, FM Tromp, RM
Citation: Ea. Stach et al., New mechanism for dislocation blocking in strained layer epitaxial growth, PHYS REV L, 84(5), 2000, pp. 947-950

Authors: Stach, EA Kelsch, M Nelson, EC Wong, WS Sands, T Cheung, NW
Citation: Ea. Stach et al., Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off, APPL PHYS L, 77(12), 2000, pp. 1819-1821

Authors: Moore, KT Howe, JM Veblen, DR Murray, TM Stach, EA
Citation: Kt. Moore et al., Analysis of electron intensity as a function of aperture size in energy-filtered transmission electron microscope imaging, ULTRAMICROS, 80(3), 1999, pp. 221-236

Authors: Hull, R Stach, EA Tromp, R Ross, F Reuter, M
Citation: R. Hull et al., Interactions of moving dislocations in semiconductors with point, line andplanar defects, PHYS ST S-A, 171(1), 1999, pp. 133-146
Risultati: 1-10 |