AAAAAA
Results:
1-9
|
Results: 9
Authors:
DiMaria, DJ
Stathis, JH
Citation: Dj. Dimaria et Jh. Stathis, Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films, J APPL PHYS, 89(9), 2001, pp. 5015-5024
Authors:
Wu, EY
Stathis, JH
Han, LK
Citation: Ey. Wu et al., Ultra-thin oxide reliability for ULSI applications, SEMIC SCI T, 15(5), 2000, pp. 425-435
Authors:
Blochl, PE
Stathis, JH
Citation: Pe. Blochl et Jh. Stathis, Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs, PHYSICA B, 274, 1999, pp. 1022-1026
Authors:
Stathis, JH
DiMaria, DJ
Citation: Jh. Stathis et Dj. Dimaria, Oxide scaling limit for future logic and memory technology, MICROEL ENG, 48(1-4), 1999, pp. 395-401
Authors:
Nishikawa, H
Stahlbush, RE
Stathis, JH
Citation: H. Nishikawa et al., Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy, PHYS REV B, 60(23), 1999, pp. 15910-15918
Authors:
Blochl, PE
Stathis, JH
Citation: Pe. Blochl et Jh. Stathis, Hydrogen electrochemistry and stress-induced leakage current in silica, PHYS REV L, 83(2), 1999, pp. 372-375
Authors:
Stathis, JH
Citation: Jh. Stathis, Percolation models for gate oxide breakdown, J APPL PHYS, 86(10), 1999, pp. 5757-5766
Authors:
Nishikawa, H
Stathis, JH
Cartier, E
Citation: H. Nishikawa et al., Defects in thermal oxide studied by photoluminescence spectroscopy, APPL PHYS L, 75(9), 1999, pp. 1219-1221
Authors:
DiMaria, DJ
Stathis, JH
Citation: Dj. Dimaria et Jh. Stathis, Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films, APPL PHYS L, 74(12), 1999, pp. 1752-1754
Risultati:
1-9
|