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Results: 1-25/53
Authors:
Houssa, M
Naili, M
Heyns, M
Stesmans, A
Citation: M. Houssa et al., Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks, JPN J A P 1, 40(4B), 2001, pp. 2804-2809
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Hydrogen release related to hole injection into SiO2 layers on Si, MAT SC S PR, 4(1-3), 2001, pp. 149-151
Authors:
Stesmans, A
Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Electron spin resonance observation of Si dangling-bond-type defects at the interface of (100) Si with ultrathin layers of SiOx, Al2O3 and ZrO2, J PHYS-COND, 13(28), 2001, pp. L673-L680
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Proton nature of radiation-induced positive charge in SiO2 layers on Si, EUROPH LETT, 53(2), 2001, pp. 233-239
Authors:
Houssa, M
Stesmans, A
Heyns, MM
Citation: M. Houssa et al., Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2gate dielectric stacks, SEMIC SCI T, 16(6), 2001, pp. 427-432
Authors:
Houssa, M
Naili, M
Zhao, C
Bender, H
Heyns, MM
Stesmans, A
Citation: M. Houssa et al., Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks, SEMIC SCI T, 16(1), 2001, pp. 31-38
Authors:
Afanas'ev, VV
Adriaenssens, GJ
Stesmans, A
Citation: Vv. Afanas'Ev et al., Positive charging of thermal SiO2 layers: hole trapping versus proton trapping, MICROEL ENG, 59(1-4), 2001, pp. 85-88
Authors:
Afanas'ev, VV
Houssa, M
Stesmans, A
Adriaenssens, GJ
Heyns, MM
Citation: Vv. Afanas'Ev et al., Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements, MICROEL ENG, 59(1-4), 2001, pp. 335-339
Authors:
Houssa, A
Afanas'ev, VV
Stesmans, A
Heyns, MM
Citation: A. Houssa et al., Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacksand the dispersive transport model, MICROEL ENG, 59(1-4), 2001, pp. 367-371
Authors:
Iakoubovskii, K
Stesmans, A
Citation: K. Iakoubovskii et A. Stesmans, Characterization of defects in as-grown CVD diamond films and HPHT diamondpowders by electron paramagnetic resonance, PHYS ST S-A, 186(2), 2001, pp. 199-206
Authors:
Houssa, M
Naili, M
Heyns, MM
Stesmans, A
Citation: M. Houssa et al., Model for the charge trapping in high permittivity gate dielectric stacks, J APPL PHYS, 89(1), 2001, pp. 792-794
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures, J ELCHEM SO, 148(5), 2001, pp. G279-G282
Authors:
Houssa, M
Afanas'ev, VV
Stesmans, A
Heyns, MM
Citation: M. Houssa et al., Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks, APPL PHYS L, 79(19), 2001, pp. 3134-3136
Authors:
Afanas'eva, VV
Stesmans, A
Bassler, M
Pensl, G
Schulz, MJ
Citation: Vv. Afanas'Eva et al., Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)], APPL PHYS L, 78(25), 2001, pp. 4043-4044
Authors:
Houssa, M
Stesmans, A
Carter, RJ
Heyns, MM
Citation: M. Houssa et al., Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model, APPL PHYS L, 78(21), 2001, pp. 3289-3291
Authors:
Afanas'ev, VV
Houssa, M
Stesmans, A
Heyns, MM
Citation: Vv. Afanas'Ev et al., Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators, APPL PHYS L, 78(20), 2001, pp. 3073-3075
Authors:
Stesmans, A
Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Comment on "Do Pb1 centers have levels in the Si band gap? Spin-dependentrecombination study of the Pb1 'hyperfine spectrum'", APPL PHYS L, 78(10), 2001, pp. 1451-1452
Authors:
Stesmans, A
Citation: A. Stesmans, Dissociation kinetics of hydrogen-passivated P-b defects at the (111)Si/SiO2 interface, PHYS REV B, 61(12), 2000, pp. 8393-8403
Authors:
Stesmans, A
Nouwen, B
Iakoubovskii, K
Citation: A. Stesmans et al., Electron spin resonance characterization of a divacancy-related centre in CVD diamond, J PHYS-COND, 12(35), 2000, pp. 7807-7817
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Charge state of paramagnetic E ' centre in thermal SiO2 layers on silicon, J PHYS-COND, 12(10), 2000, pp. 2285-2290
Authors:
Iakoubovskii, K
Baidakova, MV
Wouters, BH
Stesmans, A
Adriaenssens, GJ
Vul', AY
Grobet, PJ
Citation: K. Iakoubovskii et al., Structure and defects of detonation synthesis nanodiamond, DIAM RELAT, 9(3-6), 2000, pp. 861-865
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Leakage currents induced in ultrathin oxides on (100)Si by deep-UV photons, MAT SCI E B, 71, 2000, pp. 56-61
Authors:
Afanas'ev, VV
Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Generation of interface states in alpha-SiC/SiO2 by electron injection, MAT SCI E B, 71, 2000, pp. 309-314
Authors:
Nouwen, B
Stesmans, A
Citation: B. Nouwen et A. Stesmans, Dependence of strain at the (111)Si/SiO2 interface on interfacial Si dangling-bond concentration, MAT SCI E A, 288(2), 2000, pp. 239-243
Authors:
Stesmans, A
Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Defects at the interface of ultra-thin VUV-grown oxide on Si studied by electron spin resonance, APPL SURF S, 168(1-4), 2000, pp. 324-327