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Results: 1-25 | 26-50 | 51-53
Results: 26-50/53
ESR and optical evidence for a Ni vacancy center in CVD diamond
Authors: Iakoubovskii, K Stesmans, A Nouwen, B Adriaenssens, GJ
Citation: K. Iakoubovskii et al., ESR and optical evidence for a Ni vacancy center in CVD diamond, PHYS REV B, 62(24), 2000, pp. 16587-16594
Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface
Authors: Stesmans, A Nouwen, B
Citation: A. Stesmans et B. Nouwen, Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface, PHYS REV B, 61(23), 2000, pp. 16068-16076
Interaction of P-b defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation
Authors: Stesmans, A
Citation: A. Stesmans, Interaction of P-b defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation, J APPL PHYS, 88(1), 2000, pp. 489-497
Trap-assisted tunneling in high permittivity gate dielectric stacks
Authors: Houssa, M Tuominen, M Naili, M Afanas'ev, V Stesmans, A Haukka, S Heyns, MM
Citation: M. Houssa et al., Trap-assisted tunneling in high permittivity gate dielectric stacks, J APPL PHYS, 87(12), 2000, pp. 8615-8620
Pressure dependence of Si/SiO2 degradation suppression by helium
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Pressure dependence of Si/SiO2 degradation suppression by helium, J APPL PHYS, 87(10), 2000, pp. 7338-7341
Charge trapping in very thin high-permittivity gate dielectric layers
Authors: Houssa, M Stesmans, A Naili, M Heyns, MM
Citation: M. Houssa et al., Charge trapping in very thin high-permittivity gate dielectric layers, APPL PHYS L, 77(9), 2000, pp. 1381-1383
Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfaces
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfaces, APPL PHYS L, 77(13), 2000, pp. 2024-2026
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
Authors: Houssa, M Afanas'ev, VV Stesmans, A Heyns, MM
Citation: M. Houssa et al., Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation, APPL PHYS L, 77(12), 2000, pp. 1885-1887
Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si
Authors: Stesmans, A Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si, APPL PHYS L, 77(10), 2000, pp. 1469-1471
Shallow electron traps at the 4H-SiC/SiO2 interface
Authors: Afanas'ev, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ
Citation: Vv. Afanas'Ev et al., Shallow electron traps at the 4H-SiC/SiO2 interface, APPL PHYS L, 76(3), 2000, pp. 336-338
Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study
Authors: Nesladek, M Meykens, K Haenen, K Navratil, J Quaeyhaegens, C Stals, LM Stesmans, A Iakoubovskij, K Adriaenssens, GJ Rosa, J Vanecek, M
Citation: M. Nesladek et al., Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study, DIAM RELAT, 8(8-9), 1999, pp. 1480-1484
Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface
Authors: Stesmans, A Nouwen, B
Citation: A. Stesmans et B. Nouwen, Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface, MAT SCI E B, 58(1-2), 1999, pp. 52-55
Ionisation and trapping of hydrogen at SiO2 interfaces
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Ionisation and trapping of hydrogen at SiO2 interfaces, MAT SCI E B, 58(1-2), 1999, pp. 56-59
Hydrogen enhancement of thermally induced interface degradation in thermal(111) Si/SiO2 traced by electron spin resonance
Authors: Stesmans, A Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Hydrogen enhancement of thermally induced interface degradation in thermal(111) Si/SiO2 traced by electron spin resonance, MAT SCI E B, 58(1-2), 1999, pp. 71-75
Electron spin resonance study of the interaction of hydrogen with the (111)Si/SiO2 interface: Pb-hydrogen interaction kinetics
Authors: Stesmans, A
Citation: A. Stesmans, Electron spin resonance study of the interaction of hydrogen with the (111)Si/SiO2 interface: Pb-hydrogen interaction kinetics, PHYSICA B, 274, 1999, pp. 1015-1021
Nature of the P-bl interface defect in (100)Si/SiO2 as revealed by electron spin resonance Si-29 hyperfine structure
Authors: Stesmans, A Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Nature of the P-bl interface defect in (100)Si/SiO2 as revealed by electron spin resonance Si-29 hyperfine structure, MICROEL ENG, 48(1-4), 1999, pp. 113-116
Suppression of thermal degradation in standard Si/SiO2 by noble gases
Authors: Stesmans, A Afanas'ev, VV
Citation: A. Stesmans et Vv. Afanas'Ev, Suppression of thermal degradation in standard Si/SiO2 by noble gases, MICROEL ENG, 48(1-4), 1999, pp. 131-134
Relationship between hole trapping and oxide density in thermally grown SiO2
Authors: Mrstik, BJ Afanas'ev, VV Stesmans, A McMarr, PJ
Citation: Bj. Mrstik et al., Relationship between hole trapping and oxide density in thermally grown SiO2, MICROEL ENG, 48(1-4), 1999, pp. 143-146
Trapping of H+ and Li+ ions at the Si/SiO2 interface
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Trapping of H+ and Li+ ions at the Si/SiO2 interface, PHYS REV B, 60(8), 1999, pp. 5506-5512
Photoionization of silicon particles in SiO2
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Photoionization of silicon particles in SiO2, PHYS REV B, 59(3), 1999, pp. 2025-2034
Effect of stress on optical and ESR lines in CVD diamond
Authors: Iakoubovskii, K Stesmans, A Adriaenssens, GJ Provoost, R Silverans, RE Raiko, V
Citation: K. Iakoubovskii et al., Effect of stress on optical and ESR lines in CVD diamond, PHYS ST S-A, 174(1), 1999, pp. 137-143
Relationship between oxide density and charge trapping in SiO2 films
Authors: Mrstik, BJ Afanas'ev, VV Stesmans, A McMarr, PJ Lawrence, RK
Citation: Bj. Mrstik et al., Relationship between oxide density and charge trapping in SiO2 films, J APPL PHYS, 85(9), 1999, pp. 6577-6588
SiC/SiO2 interface-state generation by electron injection
Authors: Afanas'ev, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ Harris, CI
Citation: Vv. Afanas'Ev et al., SiC/SiO2 interface-state generation by electron injection, J APPL PHYS, 85(12), 1999, pp. 8292-8298
Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation, J ELCHEM SO, 146(9), 1999, pp. 3409-3414
Blockage of the annealing-induced Si/SiO2 degradation by helium
Authors: Afanas'ev, VV Stesmans, A
Citation: Vv. Afanas'Ev et A. Stesmans, Blockage of the annealing-induced Si/SiO2 degradation by helium, APPL PHYS L, 74(7), 1999, pp. 1009-1011
Risultati: 1-25 | 26-50 | 51-53