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Results: 1-11 |
Results: 11
Ion channeling effects on the focused ion beam milling of Cu
Authors: Kempshall, BW Schwarz, SM Prenitzer, BI Giannuzzi, LA Irwin, RB Stevie, FA
Citation: Bw. Kempshall et al., Ion channeling effects on the focused ion beam milling of Cu, J VAC SCI B, 19(3), 2001, pp. 749-754
Application of focused ion beam lift-out specimen preparation to TEM, SEM,STEM, AES and SIMS analysis
Authors: Stevie, FA Vartuli, CB Giannuzzi, LA Shofner, TL Brown, SR Rossie, B Hillion, F Mills, RH Antonell, M Irwin, RB Purcell, BM
Citation: Fa. Stevie et al., Application of focused ion beam lift-out specimen preparation to TEM, SEM,STEM, AES and SIMS analysis, SURF INT AN, 31(5), 2001, pp. 345-351
Dopant dose loss at the Si-SiO2 interface
Authors: Vuong, HH Rafferty, CS Eshraghi, SA Ning, J McMacken, JR Chaudhry, S McKinley, J Stevie, FA
Citation: Hh. Vuong et al., Dopant dose loss at the Si-SiO2 interface, J VAC SCI B, 18(1), 2000, pp. 428-434
Surface quantification by ion implantation through a removable layer
Authors: Stevie, FA Roberts, RF McKinley, JM Decker, MA Granger, CN Santiesteban, R Hitzman, CJ
Citation: Fa. Stevie et al., Surface quantification by ion implantation through a removable layer, J VAC SCI B, 18(1), 2000, pp. 483-488
Depth profiling of ultra-shallow implants using a Cameca IMS-6f
Authors: McKinley, JM Stevie, FA Neil, T Lee, JJ Wu, L Sieloff, D Granger, C
Citation: Jm. Mckinley et al., Depth profiling of ultra-shallow implants using a Cameca IMS-6f, J VAC SCI B, 18(1), 2000, pp. 514-518
Analysis of alkali elements in insulators using a CAMECA IMS-6f
Authors: McKinley, JM Stevie, FA Granger, CN Renard, D
Citation: Jm. Mckinley et al., Analysis of alkali elements in insulators using a CAMECA IMS-6f, J VAC SCI A, 18(1), 2000, pp. 273-277
Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry
Authors: Stevie, FA Downey, SW Brown, SR Shofner, TL Decker, MA Dingle, T Christman, L
Citation: Fa. Stevie et al., Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry, J VAC SCI B, 17(6), 1999, pp. 2476-2482
A review of focused ion beam milling techniques for TEM specimen preparation
Authors: Giannuzzi, LA Stevie, FA
Citation: La. Giannuzzi et Fa. Stevie, A review of focused ion beam milling techniques for TEM specimen preparation, MICRON, 30(3), 1999, pp. 197-204
Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry
Authors: Zhou, D Stevie, FA Chow, L McKinley, J Gnaser, H Desai, VH
Citation: D. Zhou et al., Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry, J VAC SCI A, 17(4), 1999, pp. 1135-1140
Behavior of molybdenum in silicon evaluated for integrated circuit processing
Authors: Benton, JL Jacobson, DC Jackson, B Johnson, JA Boone, T Eaglesham, DJ Stevie, FA Becerro, J
Citation: Jl. Benton et al., Behavior of molybdenum in silicon evaluated for integrated circuit processing, J ELCHEM SO, 146(5), 1999, pp. 1929-1933
Boron pileup and clustering in silicon-on-insulator films
Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085
Risultati: 1-11 |