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Results:
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Results: 2
Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data
Authors:
Zhang, Q Liou, JJ McMacken, J Thomson, JR Stiles, K Layman, P
Citation:
Q. Zhang et al., Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data, SOL ST ELEC, 45(9), 2001, pp. 1537-1547
Comparison of the new VBIC and conventional Gummel-Poon bipolar transistormodels
Authors:
Cao, XC McMacken, J Stiles, K Layman, P Liou, JJ Ortiz-Conde, A Moinian, S
Citation:
Xc. Cao et al., Comparison of the new VBIC and conventional Gummel-Poon bipolar transistormodels, IEEE DEVICE, 47(2), 2000, pp. 427-433
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