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Results:
1-14
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Results: 14
Authors:
Voss, S
Bracht, H
Stolwijk, NA
Citation: S. Voss et al., High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon, MAT SC S PR, 4(1-3), 2001, pp. 67-70
Authors:
Obeidi, S
Stolwijk, NA
Citation: S. Obeidi et Na. Stolwijk, Diffusion of iridium in silicon: Changeover from a foreign-atom-limited toa native-defect-controlled transport mode - art. no. 113201, PHYS REV B, 6411(11), 2001, pp. 3201
Authors:
Giese, A
Bracht, H
Stolwijk, NA
Baither, D
Citation: A. Giese et al., Microscopic defects in silicon induced by zinc out-diffusion, MAT SCI E B, 71, 2000, pp. 160-165
Authors:
Bosker, G
Popping, J
Stolwijk, NA
Mehrer, H
Burchard, A
Citation: G. Bosker et al., Implantation and diffusion of As-73 in GaAs and GaP, HYPER INTER, 129(1-4), 2000, pp. 337-347
Authors:
Bosker, G
Popping, J
Stolwijk, NA
Mehrer, H
Buchard, A
Citation: G. Bosker et al., Implantation and diffusion of As-73 in GaAs and GaP, HYPER INTER, 129(1-4), 2000, pp. 337-347
Authors:
Giese, A
Stolwijk, NA
Bracht, H
Citation: A. Giese et al., Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information, APPL PHYS L, 77(5), 2000, pp. 642-644
Authors:
Bracht, H
Stolwijk, NA
Laube, M
Pensl, G
Citation: H. Bracht et al., Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism, APPL PHYS L, 77(20), 2000, pp. 3188-3190
Authors:
Voss, S
Bracht, H
Stolwijk, NA
Citation: S. Voss et al., Low-temperature spreading-resistance profiling for the characterization ofimpurity distributions in germanium, PHYSICA B, 274, 1999, pp. 561-564
Authors:
Stolwijk, NA
Bosker, G
Thordson, JV
Sodervall, U
Andersson, TG
Jager, C
Jager, W
Citation: Na. Stolwijk et al., Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers, PHYSICA B, 274, 1999, pp. 685-688
Authors:
Masuhr, A
Bracht, H
Stolwijk, NA
Overhof, H
Mehrer, H
Citation: A. Masuhr et al., Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study, SEMIC SCI T, 14(5), 1999, pp. 435-440
Authors:
Jager, C
Jager, W
Popping, J
Bosker, G
Stolwijk, NA
Citation: C. Jager et al., Formation of metal precipitates and voids by zinc diffusion in GaP, J ELEC MICR, 48, 1999, pp. 1037-1046
Authors:
Bosker, G
Stolwijk, NA
Mehrer, H
Sodervall, U
Jager, W
Citation: G. Bosker et al., Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice, J APPL PHYS, 86(2), 1999, pp. 791-799
Authors:
Lerch, W
Gluck, M
Stolwijk, NA
Walk, H
Schafer, M
Marcus, SD
Downey, DF
Chow, JW
Citation: W. Lerch et al., Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient, J ELCHEM SO, 146(7), 1999, pp. 2670-2678
Authors:
Voss, S
Bracht, H
Stolwijk, NA
Kringhoj, P
Larsen, AN
Citation: S. Voss et al., Energy levels of Zn in Si1-xGex alloys: The change-over from highly localized deep states to shallow-level centers, PHYS ST S-B, 210(2), 1998, pp. 771-775
Risultati:
1-14
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