Authors:
Pan, W
Stormer, HL
Tsui, DC
Pfeiffer, LN
Baldwin, KW
West, KW
Citation: W. Pan et al., Experimental evidence for a spin-polarized ground state in the nu=5/2 fractional quantum Hall effect, SOL ST COMM, 119(12), 2001, pp. 641-645
Authors:
Jurkovic, MJ
Li, LK
Turk, B
Wang, WI
Syed, S
Simonian, D
Stormer, HL
Citation: Mj. Jurkovic et al., High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer, MRS I J N S, 5, 2000, pp. NIL_394-NIL_400
Citation: Mj. Manfra et al., High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy, APPL PHYS L, 77(18), 2000, pp. 2888-2890
Authors:
Li, LK
Turk, B
Wang, WI
Syed, S
Simonian, D
Stormer, HL
Citation: Lk. Li et al., High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 742-744
Authors:
Pan, W
Du, RR
Stormer, HL
Tsui, DC
Pfeiffer, LN
Baldwin, KW
West, KW
Citation: W. Pan et al., Strongly anisotropic electronic transport at Landau level filling factor nu=9/2 and nu=5/2 under a tilted magnetic field, PHYS REV L, 83(4), 1999, pp. 820-823
Authors:
Pan, W
Xia, JS
Shvarts, V
Adams, DE
Stormer, HL
Tsui, DC
Pfeiffer, LN
Baldwin, KW
West, KW
Citation: W. Pan et al., Exact quantization of the even-denominator fractional quantum Hall state at v=5/2 Landau level filling factor, PHYS REV L, 83(17), 1999, pp. 3530-3533