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Results: 1-9 |
Results: 9
Semiconductor light sources for mid-infrared applications: concluding remarks
Authors: Stradling, RA
Citation: Ra. Stradling, Semiconductor light sources for mid-infrared applications: concluding remarks, PHI T ROY A, 359(1780), 2001, pp. 645-658
Antimony-based infrared materials and devices
Authors: Grigorescu, CEA Stradling, RA
Citation: Cea. Grigorescu et Ra. Stradling, Antimony-based infrared materials and devices, THIN FILM, 28, 2001, pp. 147-191
Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells - art. no. 201307
Authors: Rowe, ACH Nehls, J Stradling, RA Ferguson, RS
Citation: Ach. Rowe et al., Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells - art. no. 201307, PHYS REV B, 6320(20), 2001, pp. 1307
Direct imaging of commensurate vortex structures in ordered antidot arrays- art. no. 052504
Authors: Grigorenko, AN Howells, GD Bending, SJ Bekaert, J Van Bael, MJ Van Look, L Moshchalkov, VV Bruynseraede, Y Borghs, G Kaya, II Stradling, RA
Citation: An. Grigorenko et al., Direct imaging of commensurate vortex structures in ordered antidot arrays- art. no. 052504, PHYS REV B, 6305(5), 2001, pp. 2504
Polarization-dependent Raman spectroscopic protocols for calibration of the alloy composition and strain in bulk and thin-film Si1-xGex
Authors: Rath, S Grigorescu, C Hsieh, ML Voudouris, E Stradling, RA
Citation: S. Rath et al., Polarization-dependent Raman spectroscopic protocols for calibration of the alloy composition and strain in bulk and thin-film Si1-xGex, SEMIC SCI T, 15(2), 2000, pp. L1-L5
A catchment model of high electric field conduction in high concentration narrow-gap semiconductors
Authors: Rowe, ACH Gatzke, C Stradling, RA Solin, SA
Citation: Ach. Rowe et al., A catchment model of high electric field conduction in high concentration narrow-gap semiconductors, APPL PHYS L, 76(14), 2000, pp. 1902-1904
Boundary scattering in wet-etched InAs GaSb heterostructure wires: with and without magnetic field
Authors: Rahman, F Thornton, TJ Gallagher, BL Stradling, RA
Citation: F. Rahman et al., Boundary scattering in wet-etched InAs GaSb heterostructure wires: with and without magnetic field, SEMIC SCI T, 14(5), 1999, pp. 478-483
Suppression of LO phonon scattering in Landau quantized quantum dots
Authors: Murdin, BN Hollingworth, AR Kamal-Saadi, M Kotitschke, RT Ciesla, CM Pidgeon, CR Findlay, PC Pellemans, HPM Langerak, CJGM Rowe, AC Stradling, RA Gornik, E
Citation: Bn. Murdin et al., Suppression of LO phonon scattering in Landau quantized quantum dots, PHYS REV B, 59(12), 1999, pp. R7817-R7820
Room-temperature InAsSb strained-layer superlattice light-emitting diodes at lambda = 4.2 mu m with AlSb barriers for improved carrier confinement
Authors: Pullin, MJ Hardaway, HR Heber, JD Phillips, CC Yuen, WT Stradling, RA Moeck, P
Citation: Mj. Pullin et al., Room-temperature InAsSb strained-layer superlattice light-emitting diodes at lambda = 4.2 mu m with AlSb barriers for improved carrier confinement, APPL PHYS L, 74(16), 1999, pp. 2384-2386
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