Authors:
Svrcek, V
Pelant, I
Kocka, J
Fojtik, P
Rezek, B
Stuchlikova, H
Fejfar, A
Stuchlik, J
Poruba, A
Tousek, J
Citation: V. Svrcek et al., Transport anisotropy in microcrystalline silicon studied by measurement ofambipolar diffusion length, J APPL PHYS, 89(3), 2001, pp. 1800-1805
Authors:
Kocka, J
Stuchlik, J
Stuchlikova, H
Svrcek, V
Fojtik, P
Mates, T
Luterova, K
Fejfar, A
Citation: J. Kocka et al., Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties, APPL PHYS L, 79(16), 2001, pp. 2540-2542
Authors:
Juska, G
Genevicius, K
Viliunas, M
Arlauskas, K
Stuchlikova, H
Fejfar, A
Kocka, J
Citation: G. Juska et al., New method of drift mobility evaluation in mu c-Si : H, basic idea and comparison with time-of-flight, J NON-CRYST, 266, 2000, pp. 331-335
Authors:
Nakahata, K
Kamiya, T
Fortmann, CM
Shimizu, I
Stuchlikova, H
Fejfar, A
Kocka, J
Citation: K. Nakahata et al., Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas, J NON-CRYST, 266, 2000, pp. 341-346
Authors:
Luterova, K
Fojtik, P
Poruba, A
Dian, J
Valenta, J
Stuchlikova, H
Stepanek, J
Kocka, J
Pelant, I
Citation: K. Luterova et al., Light emitting wide band gap a-Si : H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition, J NON-CRYST, 266, 2000, pp. 583-587