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Results: 1-10 |
Results: 10
Microhotplate platforms for chemical sensor research
Authors: Semancik, S Cavicchi, RE Wheeler, MC Tiffany, JE Poirier, GE Walton, RM Suehle, JS Panchapakesan, B DeVoe, DL
Citation: S. Semancik et al., Microhotplate platforms for chemical sensor research, SENS ACTU-B, 77(1-2), 2001, pp. 579-591
Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
Authors: Wang, B Suehle, JS Vogel, EM Bernstein, JB
Citation: B. Wang et al., Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress, IEEE ELEC D, 22(5), 2001, pp. 224-226
Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
Authors: Vogel, EM Edelstein, MD Suehle, JS
Citation: Em. Vogel et al., Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress, MICROEL ENG, 59(1-4), 2001, pp. 73-83
Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection
Authors: Vogel, EM Edelstein, MD Suehle, JS
Citation: Em. Vogel et al., Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection, J APPL PHYS, 90(5), 2001, pp. 2338-2346
Fast breakdown detection in ultra-thin dielectrics
Authors: Snyder, ES Suehle, JS
Citation: Es. Snyder et Js. Suehle, Fast breakdown detection in ultra-thin dielectrics, SOL ST TECH, 2000, pp. S4-S8
Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
Authors: Vogel, EM Suehle, JS Edelstein, MD Wang, B Chen, Y Bernstein, JB
Citation: Em. Vogel et al., Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress, IEEE DEVICE, 47(6), 2000, pp. 1183-1191
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics
Authors: Vogel, EM Henson, WK Richter, CA Suehle, JS
Citation: Em. Vogel et al., Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics, IEEE DEVICE, 47(3), 2000, pp. 601-608
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
Authors: Kolodzey, J Chowdhury, EA Adam, TN Qui, GH Rau, I Olowolafe, JO Suehle, JS Chen, Y
Citation: J. Kolodzey et al., Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon, IEEE DEVICE, 47(1), 2000, pp. 121-128
Micromachined convective accelerometers in standard integrated circuits technology
Authors: Milanovic, V Bowen, E Zaghloul, ME Tea, NH Suehle, JS Payne, B Gaitan, M
Citation: V. Milanovic et al., Micromachined convective accelerometers in standard integrated circuits technology, APPL PHYS L, 76(4), 2000, pp. 508-510
Reliability of laser-induced metallic vertical links
Authors: Zhang, W Lee, JH Chen, Y Bernstein, JB Suehle, JS
Citation: W. Zhang et al., Reliability of laser-induced metallic vertical links, IEEE T AD P, 22(4), 1999, pp. 614-619
Risultati: 1-10 |