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Results: 26-32/32
Authors:
Xu, D
Suemitsu, T
Osaka, J
Umeda, Y
Yamane, Y
Ishii, Y
Ishii, T
Tamamura, T
Citation: D. Xu et al., An 0.03-mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f(T) and 2 S/mm extrinsic transconductance, IEEE ELEC D, 20(5), 1999, pp. 206-208
Authors:
Xu, D
Osaka, J
Umeda, Y
Suemitsu, T
Yamane, Y
Ishii, Y
Citation: D. Xu et al., Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well, IEEE ELEC D, 20(3), 1999, pp. 109-112
Authors:
Xu, D
Suemitsu, T
Yokoyama, H
Umeda, Y
Yamane, Y
Enoki, T
Ishii, Y
Citation: D. Xu et al., Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance, SOL ST ELEC, 43(8), 1999, pp. 1527-1533
Authors:
Suemitsu, T
Nishio, K
Igashira, K
Motojima, S
Citation: T. Suemitsu et al., Improvement on the performance of ceramic gas turbine components by chemical vapor infiltration, J JPN METAL, 63(8), 1999, pp. 994-1001
Authors:
Suemitsu, T
Nishio, K
Motojima, S
Citation: T. Suemitsu et al., Preparation of silicon carbide films by chemical vapor deposition using SiCl4-CH4-H-2 gases, J JPN METAL, 63(7), 1999, pp. 882-887
Authors:
Suemitsu, T
Yokoyama, H
Umeda, Y
Enoki, T
Ishii, Y
Citation: T. Suemitsu et al., High-performance 0.1-mu m gate enhancement-mode InAlAs InGaAs HEMT's usingtwo-step recessed gate technology, IEEE DEVICE, 46(6), 1999, pp. 1074-1080
Authors:
Suemitsu, T
Yokoyama, H
Ishii, Y
Citation: T. Suemitsu et al., Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs, ELECTR LETT, 35(24), 1999, pp. 2141-2143