Authors:
Otsuka, N
Tsujimura, A
Hasegawa, Y
Sugahara, G
Kume, M
Ban, Y
Citation: N. Otsuka et al., Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate, JPN J A P 2, 39(5B), 2000, pp. L445-L448
Authors:
Kidoguchi, I
Ishibashi, A
Sugahara, G
Tsujimura, A
Ban, Y
Citation: I. Kidoguchi et al., Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth, JPN J A P 2, 39(5B), 2000, pp. L453-L456
Authors:
Tsujimura, A
Ishibashi, A
Hasegawa, Y
Kamiyama, S
Kidoguchi, I
Otsuka, N
Miyanaga, R
Sugahara, G
Suzuki, M
Kume, M
Harafuji, K
Ban, Y
Citation: A. Tsujimura et al., Room-temperature CW operation of GaInN multiple quantum well laser diodes with optimized indium content, PHYS ST S-A, 176(1), 1999, pp. 53-57