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Results:
1-7
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Results: 7
Authors:
Hansch, W
Borthen, P
Schulze, J
Fink, C
Sulima, T
Eisele, I
Citation: W. Hansch et al., Performance improvement in vertical surface tunneling transistors by a boron surface phase, JPN J A P 1, 40(5A), 2001, pp. 3131-3136
Authors:
Schulze, J
Fink, C
Sulima, T
Eisele, I
Hansch, W
Citation: J. Schulze et al., Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111), THIN SOL FI, 380(1-2), 2000, pp. 154-157
Authors:
Schulze, J
Baumgartner, H
Fink, C
Dollinger, G
Gentchev, I
Gorgens, L
Hansch, W
Hoster, HE
Metzger, TH
Paniango, R
Stimpel, T
Sulima, T
Eisele, I
Citation: J. Schulze et al., The formation of silicon (111) boron surface phases and their influence onthe epitaxial growth of silicon and germanium, THIN SOL FI, 369(1-2), 2000, pp. 10-15
Authors:
Fink, C
Anil, KG
Geiger, H
Hansch, W
Schulze, J
Sulima, T
Eisele, I
Citation: C. Fink et al., Optimization of breakdown behaviour and short channel effects in MBE-grownvertical MOS-devices with local channel doping, THIN SOL FI, 369(1-2), 2000, pp. 383-386
Authors:
Stadler, A
Sulima, T
Schulze, J
Fink, C
Kottantharayil, A
Hansch, W
Baumgartner, H
Eisele, I
Lerch, W
Citation: A. Stadler et al., Dopant diffusion during rapid thermal oxidation, SOL ST ELEC, 44(5), 2000, pp. 831-835
Authors:
Polisski, G
Kovalev, D
Dollinger, G
Sulima, T
Koch, F
Citation: G. Polisski et al., Boron in mesoporous Si - Where have all the carriers gone?, PHYSICA B, 274, 1999, pp. 951-954
Authors:
Paul, A
Rottger, S
Honig, A
Sulima, T
Buchholz, A
Keyser, U
Citation: A. Paul et al., Measurement of short-lived radon progenies by simultaneous alpha gamma-spectrometry at the German radon reference chamber, NUCL INST A, 434(2-3), 1999, pp. 303-312
Risultati:
1-7
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