Authors:
Morishita, Y
Sunagawa, J
Yumoto, Y
Kawai, S
Citation: Y. Morishita et al., Effects of regularity of honeycomb hollows formed by the anodization of GaAs substrates on the molecular-beam epitaxial growth of InAs dots, J CRYST GR, 227, 2001, pp. 1049-1052