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Results:
1-20
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Results: 20
Authors:
Kang, EG
Moon, SH
Sung, MY
Citation: Eg. Kang et al., A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics, JPN J A P 1, 40(9A), 2001, pp. 5262-5266
Authors:
Kang, EG
Moon, SH
Sung, MY
Citation: Eg. Kang et al., A latch-up immunized lateral trench insulated gate bipolar transistor witha p+ diverter structure for smart power integrated circuit, JPN J A P 1, 40(9A), 2001, pp. 5267-5270
Authors:
Kim, JW
Kim, SI
Kim, YT
Kim, S
Sung, MY
Choi, IH
Citation: Jw. Kim et al., Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN, JPN J A P 1, 40(7), 2001, pp. 4450-4453
Authors:
Hong, JK
Kim, S
Sung, MY
Chung, YC
Kim, SU
Park, MJ
Citation: Jk. Hong et al., The subbands and resonant tunneling of a two-dimensional electron gas in aHgCdTe metal-insulator-semiconductor structure, JPN J A P 1, 40(4A), 2001, pp. 2201-2204
Authors:
Sung, MY
Chang, NY
Cho, JS
Shin, H
Citation: My. Sung et al., Performance analysis of BusNet protocol for backplane bus-based interprocessor communication, COMPUT COMM, 24(15-16), 2001, pp. 1578-1588
Authors:
Lee, JS
Kim, E
Sung, MW
Kim, KH
Sung, MY
Park, KS
Citation: Js. Lee et al., A method for assessing the regional vibratory pattern of vocal folds by analysing the video recording of stroboscopy, MED BIO E C, 39(3), 2001, pp. 273-278
Authors:
Kang, EG
Kim, S
Sung, MY
Citation: Eg. Kang et al., Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics, MICROELEC J, 32(9), 2001, pp. 749-753
Authors:
Kang, EG
Moon, SH
Sung, MY
Citation: Eg. Kang et al., A new trench electrode IGBT having superior electrical characteristics forpower IC systems, MICROELEC J, 32(8), 2001, pp. 641-647
Authors:
Sung, MY
Kim, MS
Kim, EJ
Yoo, JH
Sung, MW
Citation: My. Sung et al., CoMed: a real-time collaborative medicine system, INT J MED I, 57(2-3), 2000, pp. 117-126
Authors:
Choi, WB
Ju, CM
Lee, JS
Sung, MY
Citation: Wb. Choi et al., Improvement of silicon direct bonding using surfaces activated by hydrogenplasma treatment, J KOR PHYS, 37(6), 2000, pp. 878-881
Authors:
Kim, S
Hong, JK
Moon, BM
Sung, MY
Myoung, JM
Bishop, SG
Citation: S. Kim et al., Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN, J KOR PHYS, 37(6), 2000, pp. 993-997
Authors:
Lim, KM
Kang, HC
Sung, MY
Citation: Km. Lim et al., A study on the poly-Si TFT and novel pixel structure for low flicker, MICROELEC J, 31(8), 2000, pp. 641-646
Authors:
Kim, YS
Lee, YH
Sung, MY
Citation: Ys. Kim et al., Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film, SOL ST ELEC, 43(7), 1999, pp. 1189-1193
Authors:
Lim, KM
Sung, MY
Citation: Km. Lim et My. Sung, Low noise digital data driver circuit integrated poly-Si TFT-LCD, MICROELEC J, 30(9), 1999, pp. 905-910
Authors:
Sung, MW
Kim, KH
Koh, TY
Kwon, TY
Mo, JH
Choi, SH
Lee, JS
Park, KS
Kim, EJ
Sung, MY
Citation: Mw. Sung et al., Videostrobokymography: A new method for the quantitative analysis of vocalfold vibration, LARYNGOSCOP, 109(11), 1999, pp. 1859-1863
Authors:
Choi, WB
Ju, BK
Lee, YH
Oh, MH
Lee, NY
Sung, MY
Citation: Wb. Choi et al., Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer, J MATER SCI, 34(19), 1999, pp. 4711-4717
Authors:
Lee, YH
Kim, YS
Ju, BK
Sung, MY
Oh, MH
Citation: Yh. Lee et al., Long-term conduction behavior of white-light emitting ZnS-based phosphor films, J APPL PHYS, 86(1), 1999, pp. 380-386
Authors:
Kim, YS
Sung, MY
Lee, YH
Juh, BK
Oh, MH
Citation: Ys. Kim et al., The influence of surface roughness on the electric conduction process in amorphous Ta2O5 thin films, J ELCHEM SO, 146(9), 1999, pp. 3398-3402
Authors:
Choi, WB
Ju, BK
Lee, YH
Jeong, SJ
Lee, NY
Sung, MY
Oh, MH
Citation: Wb. Choi et al., Glass-to-glass bonding for vacuum packaging of field emission display in an ultra-high-vacuum chamber using silicon thin film, J ELCHEM SO, 146(1), 1999, pp. 400-404
Authors:
Kim, YS
Lee, YH
Lim, KM
Sung, MY
Citation: Ys. Kim et al., The effect of Al-Ta2O5 topographic interface roughness on the leakage current of Ta2O5 thin films, APPL PHYS L, 74(19), 1999, pp. 2800-2802
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