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Results:
1-7
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Results: 7
Authors:
Misiuk, A
Barcz, A
Ratajczak, J
Katcki, J
Bak-Misiuk, J
Bryja, L
Surma, B
Gawlik, G
Citation: A. Misiuk et al., Structure of oxygen - Implanted silicon single crystals treated at >= 1400K under high argon pressure, CRYST RES T, 36(8-10), 2001, pp. 933-941
Authors:
Surma, B
Bryja, L
Misiuk, A
Gawlik, G
Jun, J
Antonova, IV
Prujszczyk, M
Citation: B. Surma et al., Infrared and photoluminescence studies on silicon oxide formation in oxygen-implanted silicon annealed under enhanced pressure, CRYST RES T, 36(8-10), 2001, pp. 943-952
Authors:
Romano-Rodriguez, A
Bachrouri, A
Lopez, M
Morante, JR
Misiuk, A
Surma, B
Jun, J
Citation: A. Romano-rodriguez et al., TEM characterisation of high pressure-high-temperature-treated Czochralskisilicon samples, MAT SCI E B, 73(1-3), 2000, pp. 250-254
Authors:
Czerwosz, E
Surma, B
Wnuk, A
Citation: E. Czerwosz et al., Photoluminescence and Raman investigations of structural transformation offullerenes into carbon nanotubes in vacuum annealed C-60/C-70+Ni films, J PHYS CH S, 61(12), 2000, pp. 1973-1978
Authors:
Antonova, IV
Misiuk, A
Bak-Misiuk, J
Popov, VP
Plotnikov, AE
Surma, B
Citation: Iv. Antonova et al., Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si, J ALLOY COM, 286(1-2), 1999, pp. 241-245
Authors:
Misiuk, A
Surma, B
Rebohle, L
Jun, J
Antonova, IV
Tyschenko, I
Romano-Rodriguez, A
Lopez, M
Citation: A. Misiuk et al., Luminescence properties of oxygen-containing silicon annealed at enhanced argon pressure, PHYS ST S-B, 211(1), 1999, pp. 233-238
Authors:
Surma, B
Wnuk, A
Misiuk, A
Brzozowski, A
Pawlowska, M
Franz, M
Jun, J
Rozental, M
Nossarzewska-Orlowska, E
Citation: B. Surma et al., Photoluminescence from porous structures prepared by anodization of annealed Cz-Si, CRYST RES T, 34(5-6), 1999, pp. 689-697
Risultati:
1-7
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