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Results: 1-10 |
Results: 10
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy
Authors: Faleev, NN Musikhin, YG Suvorova, AA Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Tabuchi, M Takeda, Y
Citation: Nn. Faleev et al., Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy, SEMICONDUCT, 35(8), 2001, pp. 932-940
Structural transformations in low-temperature grown GaAs : Sb
Authors: Vasyukov, DA Baidakova, MV Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Da. Vasyukov et al., Structural transformations in low-temperature grown GaAs : Sb, J PHYS D, 34(10A), 2001, pp. A15-A18
Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Authors: Chaldyshev, VV Bert, NA Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296
Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters
Authors: Brunkov, PN Chaldyshev, VV Chernigovskii, AV Suvorova, AA Bert, NA Konnikov, SG Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Pn. Brunkov et al., Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters, SEMICONDUCT, 34(9), 2000, pp. 1068-1072
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range
Authors: Maleev, NA Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Bedarev, DA Volovik, BV Krestnikov, IL Kayander, IN Odnoblyudov, VA Suvorova, AA Tsatsul'nikov, AF Shernyakov, YM Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range, SEMICONDUCT, 34(5), 2000, pp. 594-597
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Kop'ev, PS Alferov, ZI Vorob'ev, LE Firsov, DA Suvorova, AA Soshnikov, IP Werner, P Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates, MICROELEC J, 31(1), 2000, pp. 1-7
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Authors: Volovik, BV Tsatsul'nikov, AF Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Suvorova, AA Ustinov, VM Kop'ev, PS Alferov, ZI Bimberg, D Werner, P
Citation: Bv. Volovik et al., Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands, SEMICONDUCT, 33(8), 1999, pp. 901-905
Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
Authors: Usov, IO Suvorova, AA Sokolov, VV Kudryavtsev, YA Suvorov, AV
Citation: Io. Usov et al., Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation, J APPL PHYS, 86(11), 1999, pp. 6039-6042
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Authors: Bert, NA Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs, APPL PHYS L, 74(11), 1999, pp. 1588-1590
In-Ga intermixing in low-temperature grown GaAs delta doped with In
Authors: Bert, NA Chaldyshev, VV Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., In-Ga intermixing in low-temperature grown GaAs delta doped with In, APPL PHYS L, 74(10), 1999, pp. 1442-1444
Risultati: 1-10 |