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Results: 26-50/56
Authors:
Linnarsson, MK
Janson, MS
Karlsson, S
Schoner, A
Nordell, N
Svensson, BG
Citation: Mk. Linnarsson et al., Diffusion of light elements in 4H-and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 275-280
Authors:
Hallen, A
Henry, A
Pellegrino, E
Svensson, BG
Aberg, D
Citation: A. Hallen et al., Ion implantation induced defects in epitaxial 4H-SiC, MAT SCI E B, 61-2, 1999, pp. 378-381
Authors:
Schmidt, DC
Svensson, BG
Lindstrom, JL
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Enhanced diffusion of platinum in electron-irradiated silicon, MAT SCI E B, 57(2), 1999, pp. 161-164
Authors:
Lindstrom, JL
Murin, LI
Markevich, VP
Hallberg, T
Svensson, BG
Citation: Jl. Lindstrom et al., Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon, PHYSICA B, 274, 1999, pp. 291-295
Authors:
Pellegrino, P
Kuznetsov, AY
Svensson, BG
Citation: P. Pellegrino et al., Impurity-assisted annealing of point defect complexes in ion-implanted silicon, PHYSICA B, 274, 1999, pp. 489-492
Authors:
Aberg, D
Hallen, A
Svensson, BG
Citation: D. Aberg et al., Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy, PHYSICA B, 274, 1999, pp. 672-676
Authors:
Kuznetsov, AY
Radamson, HH
Svensson, BG
Ni, WX
Hansson, GV
Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205
Authors:
Schmidt, DC
Svensson, BG
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum, NUCL INST B, 155(1-2), 1999, pp. 60-66
Authors:
Kuznetsov, AY
Janson, M
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C, NUCL INST B, 148(1-4), 1999, pp. 279-283
Authors:
Pellegrino, P
Keskitalo, N
Hallen, A
Svensson, BG
Citation: P. Pellegrino et al., Reverse annealing effects in heavy ion implanted silicon, NUCL INST B, 148(1-4), 1999, pp. 306-310
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C, NUCL INST B, 147(1-4), 1999, pp. 106-110
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation, NUCL INST B, 147(1-4), 1999, pp. 127-131
Authors:
Keskitalo, N
Hallen, A
Pellegrino, P
Svensson, BG
Citation: N. Keskitalo et al., Anomalous field dependence of deep level emission in proton irradiated silicon, NUCL INST B, 147(1-4), 1999, pp. 427-431
Authors:
Lindner, JKN
Svensson, BG
Hemment, PLF
Atwater, HA
Citation: Jkn. Lindner et al., Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface, NUCL INST B, 147(1-4), 1999, pp. VII-VIII
Authors:
Linnarsson, MK
Svensson, BG
Citation: Mk. Linnarsson et Bg. Svensson, Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions, PHYS REV B, 60(20), 1999, pp. 14302-14310
Authors:
Kuznetsov, AY
Cardenas, J
Schmidt, DC
Svensson, BG
Hansen, JL
Larsen, AN
Citation: Ay. Kuznetsov et al., Sb-enhanced diffusion in strained Si1-xGex: Dependence on biaxial compression, PHYS REV B, 59(11), 1999, pp. 7274-7277
Authors:
Joelsson, KB
Hultman, L
Ni, WX
Cardenas, J
Svensson, BG
Olsson, E
Hansson, GV
Citation: Kb. Joelsson et al., Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy - A transmission electron microscopy study, J CRYST GR, 196(1), 1999, pp. 97-110
Authors:
Mangelinck, D
Cardenas, J
d'Heurle, FM
Svensson, BG
Gas, P
Citation: D. Mangelinck et al., Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface, J APPL PHYS, 86(9), 1999, pp. 4908-4915
Authors:
Hallen, A
Keskitalo, N
Josyula, L
Svensson, BG
Citation: A. Hallen et al., Migration energy for the silicon self-interstitial, J APPL PHYS, 86(1), 1999, pp. 214-216
Authors:
Schmidt, DC
Svensson, BG
Lindstrom, JL
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects, J APPL PHYS, 85(7), 1999, pp. 3556-3560
Authors:
Fatima, S
Jagadish, C
Lalita, J
Svensson, BG
Hallen, A
Citation: S. Fatima et al., Hydrogen interaction with implantation induced point defects in p-type silicon, J APPL PHYS, 85(5), 1999, pp. 2562-2567
Authors:
Aberg, D
Linnarsson, MK
Svensson, BG
Hallberg, T
Lindstrom, JL
Citation: D. Aberg et al., Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen, J APPL PHYS, 85(12), 1999, pp. 8054-8059
Authors:
Schmidt, DC
Svensson, BG
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses, APPL PHYS L, 75(3), 1999, pp. 364-366
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses, APPL PHYS L, 74(22), 1999, pp. 3329-3331
Authors:
Achtziger, N
Hulsen, C
Witthuhn, W
Linnarsson, MK
Janson, M
Svensson, BG
Citation: N. Achtziger et al., Mobility passivating effect and thermal stability of hydrogen in silicon carbide, PHYS ST S-B, 210(2), 1998, pp. 395-399