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Results: 1-11 |
Results: 11
Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Shengurov, DV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy, SEMICONDUCT, 35(8), 2001, pp. 918-923
Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxi of Si in GeH4
Authors: Svetlov, SP Shengurov, VG Chalkov, VJ Krasilnik, ZF Andreev, BA Drozdov, YN
Citation: Sp. Svetlov et al., Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxi of Si in GeH4, IAN FIZ, 65(2), 2001, pp. 203-206
The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon, IAN FIZ, 65(2), 2001, pp. 285-288
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 289-291
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000)
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000), THIN SOL FI, 381(1), 2001, pp. 164-169
A sublimation silicon molecular-beam epitaxy system
Authors: Svetlov, SP Shengurov, VG Tolomasov, VA Gorshenin, GN Chalkov, VY
Citation: Sp. Svetlov et al., A sublimation silicon molecular-beam epitaxy system, INSTR EXP R, 44(5), 2001, pp. 700-703
Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy
Authors: Svetlov, SP Chalkov, VY Shengurov, VG Uskova, EA Maksimov, GA Andreev, BA Krasil'nik, ZF Stepikhova, MV Ellmer, H
Citation: Sp. Svetlov et al., Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy, TECH PHYS L, 26(1), 2000, pp. 41-43
1,54 mu m photoluminescence from films growth by sublimation MBE Si and doped erbium and oxygen
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Uskova, EA Krasil'nik, ZF Andreev, BA Stepichova, MV
Citation: Vg. Shengurov et al., 1,54 mu m photoluminescence from films growth by sublimation MBE Si and doped erbium and oxygen, IAN FIZ, 64(2), 2000, pp. 353-357
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method, THIN SOL FI, 369(1-2), 2000, pp. 426-430
A device for sublimation molecular beam deposition of erbium-doped siliconfilms
Authors: Svetlov, SP Chalkov, VY Shengurov, VG
Citation: Sp. Svetlov et al., A device for sublimation molecular beam deposition of erbium-doped siliconfilms, INSTR EXP R, 43(4), 2000, pp. 564-565
Visible luminescence of erbium-doped silicon films grown by sublimation molecular beam epitaxy with a potential applied to the substrate
Authors: Shengurov, VG Svetlov, SP Pavlov, DA Khokhlov, AF Krasilnic, ZF Carius, R Wagner, H
Citation: Vg. Shengurov et al., Visible luminescence of erbium-doped silicon films grown by sublimation molecular beam epitaxy with a potential applied to the substrate, IAN FIZ, 63(2), 1999, pp. 406-410
Risultati: 1-11 |