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1-8
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Results: 8
Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealing
Authors:
Balachova, OV
Swart, JW
Braga, ES
Cescato, L
Citation: Ov. Balachova et al., Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealing, MICROELEC J, 32(8), 2001, pp. 673-678
Authors:
Ozelo, HFB
de Barros, LEM
Nabet, B
Neto, LG
Romero, MA
Ramos, ACS
Swart, JW
Citation: Hfb. Ozelo et al., MSM photodetector with an integrated microlens array for improved optical coupling, MICROW OPT, 26(6), 2000, pp. 357-360
Authors:
Diniz, JA
Sotero, AP
Lujan, GS
Tatsch, PJ
Swart, JW
Citation: Ja. Diniz et al., High quality of ultra-thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation, NUCL INST B, 166, 2000, pp. 64-69
Authors:
Swart, JW
Diniz, JA
Doi, I
de Moraes, MAB
Citation: Jw. Swart et al., Modification of the refractive index and the dielectric constant of silicon dioxide by means of ion implantation, NUCL INST B, 166, 2000, pp. 171-176
Authors:
Wang, JJ
Rangel, EC
da Cruz, NC
Swart, JW
de Moraes, MAB
Citation: Jj. Wang et al., Amorphous carbon nitride films irradiated with argon ions, NUCL INST B, 166, 2000, pp. 420-425
Authors:
Balachova, OV
Alves, MAR
Swart, JW
Braga, ES
Cescato, L
Citation: Ov. Balachova et al., CF4 plasma etching of materials used in microelectronics manufacturing, MICROELEC J, 31(3), 2000, pp. 213-215
Authors:
Balachova, OV
Alves, MAR
Swart, JW
Braga, ES
Cescato, L
Citation: Ov. Balachova et al., Influence of the substrate thickness and radio frequency on the depositionrate of amorphous hydrogenated carbon a-C : H films, J APPL PHYS, 85(6), 1999, pp. 3345-3347
Authors:
Swart, JW
Citation: Jw. Swart, Education on microfabrication in Latin America and the microelectronics workshop at UNICAMP, IEEE EDUCAT, 41(4), 1998, pp. 253-256
Risultati:
1-8
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