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Results: 1-11 |
Results: 11
INFLUENCE OF THE FIELD FREQUENCY ON THE NITROGEN ATOM YIELD IN THE REMOTE PLASMA OF AN N-2 HIGH-FREQUENCY DISCHARGE
Authors: MEREL P TABBAL M CHAKER M MOISAN M RICARD A
Citation: P. Merel et al., INFLUENCE OF THE FIELD FREQUENCY ON THE NITROGEN ATOM YIELD IN THE REMOTE PLASMA OF AN N-2 HIGH-FREQUENCY DISCHARGE, Plasma sources science & technology (Print), 7(4), 1998, pp. 550-556
XPS AND FTIR ANALYSIS OF NITROGEN INCORPORATION IN CNX THIN-FILMS
Authors: TABBAL M MEREL P MOISA S CHAKER M GAT E RICARD A MOISAN M GUJRATHI S
Citation: M. Tabbal et al., XPS AND FTIR ANALYSIS OF NITROGEN INCORPORATION IN CNX THIN-FILMS, Surface & coatings technology, 98(1-3), 1998, pp. 1092-1096
DIRECT EVALUATION OF THE SP(3) CONTENT IN DIAMOND-LIKE-CARBON FILMS BY XPS
Authors: MEREL P TABBAL M CHAKER M MOISA S MARGOT J
Citation: P. Merel et al., DIRECT EVALUATION OF THE SP(3) CONTENT IN DIAMOND-LIKE-CARBON FILMS BY XPS, Applied surface science, 136(1-2), 1998, pp. 105-110
HIGH-FREQUENCY MAGNETOPLASMAS IN ELECTRONEGATIVE GASES
Authors: MARGOT J CHAKER M STONGE L TABBAL M ALIOUCHOUCHE A PAUNA O ALINOT C KLIAGINE C
Citation: J. Margot et al., HIGH-FREQUENCY MAGNETOPLASMAS IN ELECTRONEGATIVE GASES, Journal de physique. IV, 7(C4), 1997, pp. 295-305
LASER-INDUCED DEPOSITION OF TUNGSTEN AND COPPER
Authors: MEUNIER M IZQUIERDO R TABBAL M EVOY S DESJARDINS P BERNIER MH BERTOMEU J ELYAAGOUBI N SUYS M SACHER E YELON A
Citation: M. Meunier et al., LASER-INDUCED DEPOSITION OF TUNGSTEN AND COPPER, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 200-207
SURFACE CHARACTERIZATION OF EXCIMER-LASER INDUCED DEPOSITION OF W ON GAAS FROM WF6 AND H-2
Authors: TABBAL M IZQUIERDO R MEUNIER M PEPIN C YELON A
Citation: M. Tabbal et al., SURFACE CHARACTERIZATION OF EXCIMER-LASER INDUCED DEPOSITION OF W ON GAAS FROM WF6 AND H-2, Applied surface science, 108(4), 1997, pp. 417-424
LASER-CHEMICAL VAPOR-DEPOSITION OF W-SCHOTTKY CONTACTS ON GAAS USING WF6 AND SIH4
Authors: TABBAL M MEUNIER M IZQUIERDO R BEAU B YELON A
Citation: M. Tabbal et al., LASER-CHEMICAL VAPOR-DEPOSITION OF W-SCHOTTKY CONTACTS ON GAAS USING WF6 AND SIH4, Journal of applied physics, 81(10), 1997, pp. 6607-6611
THE INFLUENCE OF ATOMIC NITROGEN FLUX ON THE COMPOSITION OF CARBON NITRIDE THIN-FILMS
Authors: MEREL P CHAKER M TABBAL M MOISAN M
Citation: P. Merel et al., THE INFLUENCE OF ATOMIC NITROGEN FLUX ON THE COMPOSITION OF CARBON NITRIDE THIN-FILMS, Applied physics letters, 71(26), 1997, pp. 3814-3816
X-RAY PHOTOELECTRON-SPECTROSCOPY OF CARBON NITRIDE FILMS DEPOSITED BYGRAPHITE LASER-ABLATION IN A NITROGEN POSTDISCHARGE
Authors: TABBAL M MEREL P MOISA S CHAKER M RICARD A MOISAN M
Citation: M. Tabbal et al., X-RAY PHOTOELECTRON-SPECTROSCOPY OF CARBON NITRIDE FILMS DEPOSITED BYGRAPHITE LASER-ABLATION IN A NITROGEN POSTDISCHARGE, Applied physics letters, 69(12), 1996, pp. 1698-1700
LASER PROCESSING OF TUNGSTEN FROM WF6 AND SIH4
Authors: MEUNIER M DESJARDINS P TABBAL M ELYAAGOUBI N IZQUIERDO R YELON A
Citation: M. Meunier et al., LASER PROCESSING OF TUNGSTEN FROM WF6 AND SIH4, Applied surface science, 86(1-4), 1995, pp. 475-483
EXCIMER LASER-INDUCED METALLIZATION FOR IN-SITU PROCESSING ON SI AND GAAS
Authors: MEUNIER M SUYS M TABBAL M IZQUIERDO R YELON A SACHER E
Citation: M. Meunier et al., EXCIMER LASER-INDUCED METALLIZATION FOR IN-SITU PROCESSING ON SI AND GAAS, Applied surface science, 80, 1994, pp. 208-214
Risultati: 1-11 |