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Authors:
TAFT RC
LAGE CS
HAYDEN JD
KIRSCH HC
LIN JH
DENNING DJ
SHAPIRO FB
BOCKELMAN DE
CAMILLERI N
Citation: Rc. Taft et al., THE SCC BJT - A HIGH-PERFORMANCE BIPOLAR-TRANSISTOR COMPATIBLE WITH HIGH-DENSITY DEEP-SUBMICROMETER BICMOS SRAM TECHNOLOGIES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1277-1286
Citation: Rc. Taft et Ms. Noell, DEVICE STRUCTURE CHARACTERIZATION USING THE COMPARATIVE CAPACITANCE-VOLTAGE TECHNIQUE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 332-335
Authors:
HAYDEN JD
TAFT RC
KENKARE P
MAZURE C
GUNDERSON C
NGUYEN BY
WOO M
LAGE C
ROMAN BJ
RADHAKRISHNA S
SUBRAHMANYAN R
SITARAM AR
PELLEY P
LIN JH
KEMP K
KIRSCH H
Citation: Jd. Hayden et al., A QUADRUPLE WELL, QUADRUPLE POLYSILICON BICMOS PROCESS FOR FAST 16 MBSRAMS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2318-2325