Authors: TAFT RC HAYDEN JD

Citation: Rc. Taft et Jd. Hayden, A SCALED, HIGH-PERFORMANCE (4.5-FJ) BIPOLAR DEVICE IN A 0.35-MU-M HIGH-DENSITY BICMOS SRAM TECHNOLOGY, IEEE electron device letters, 16(3), 1995, pp. 88-90

Authors: TAFT RC LAGE CS HAYDEN JD KIRSCH HC LIN JH DENNING DJ SHAPIRO FB BOCKELMAN DE CAMILLERI N

Citation: Rc. Taft et al., THE SCC BJT - A HIGH-PERFORMANCE BIPOLAR-TRANSISTOR COMPATIBLE WITH HIGH-DENSITY DEEP-SUBMICROMETER BICMOS SRAM TECHNOLOGIES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1277-1286

Authors: TAFT RC NOELL MS

Citation: Rc. Taft et Ms. Noell, DEVICE STRUCTURE CHARACTERIZATION USING THE COMPARATIVE CAPACITANCE-VOLTAGE TECHNIQUE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 332-335

Authors: HAYDEN JD TAFT RC KENKARE P MAZURE C GUNDERSON C NGUYEN BY WOO M LAGE C ROMAN BJ RADHAKRISHNA S SUBRAHMANYAN R SITARAM AR PELLEY P LIN JH KEMP K KIRSCH H

Citation: Jd. Hayden et al., A QUADRUPLE WELL, QUADRUPLE POLYSILICON BICMOS PROCESS FOR FAST 16 MBSRAMS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2318-2325