Authors: ANDOH F KOSUGI M KAWAMURA T ARAKI S TAKETOSHI K

Citation: F. Andoh et al., DEVELOPMENT OF A NOVEL IMAGE INTENSIFIER OF AN AMPLIFIED METAL-OXIDE-SEMICONDUCTOR IMAGER OVERLAID WITH ELECTRON-BOMBARDED AMORPHOUS-SILICON, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 778-784

Authors: ANDOH F TANIWAKI R TAKETOSHI K ARAKI S

Citation: F. Andoh et al., THE NOISE-REDUCTION EFFECT OF THE AMPLIFIED METAL-OXIDE-SEMICONDUCTORIMAGER, JPN J A P 1, 34(7A), 1995, pp. 3570-3575

Authors: TAKETOSHI K ANDOH F

Citation: K. Taketoshi et F. Andoh, STRUCTURAL STUDIES ON SILICON DITELLURIDE (SITE2), JPN J A P 1, 34(6A), 1995, pp. 3192-3197

Authors: TAKETOSHI K ANDOH F TANAKA K IMAI M

Citation: K. Taketoshi et al., ANALYSIS OF THE CORRELATIVE CHARACTERISTICS BETWEEN ADJACENT PIXELS OF AMPLIFIED METAL-OXIDE-SEMICONDUCTOR IMAGER BY A NEW-TYPE LEAST-SQUARES METHOD, JPN J A P 1, 32(6A), 1993, pp. 2709-2715

Authors: TANAKA K ANDO F TAKETOSHI K OHISHI I ASARI G

Citation: K. Tanaka et al., NOVEL DIGITAL PHOTOSENSOR CELL IN GAAS IC USING CONVERSION OF LIGHT-INTENSITY TO PULSE FREQUENCY, JPN J A P 1, 32(11A), 1993, pp. 5002-5007