Authors: PAN HF WU XF TANG AJ

Citation: Hf. Pan et al., THE DESIGN OF VANADIUM TRAPPING SYSTEM FOR FCC CATALYSTS, CHINESE JOURNAL OF CHEMICAL ENGINEERING, 4(2), 1996, pp. 120-124

Authors: NOGUCHI T TANG AJ TSAI JA REIF R

Citation: T. Noguchi et al., COMPARISON OF EFFECTS BETWEEN LARGE-AREA-BEAM ELA AND SPC ON TFT CHARACTERISTICS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1454-1458

Authors: NOGUCHI T TSAI JA TANG AJ REIF R

Citation: T. Noguchi et al., RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI(1-X)G(X) FILMS WITH SUBSEQUENT ANNEALING (VOL 33, PG L1748, 1994), JPN J A P 2, 34(3A), 1995, pp. 338-338

Authors: TSAI JA TANG AJ NOGUCHI T REIF R

Citation: Ja. Tsai et al., EFFECTS OF GE ON MATERIAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI1-XGEX FOR THIN-FILM TRANSISTORS, Journal of the Electrochemical Society, 142(9), 1995, pp. 3220-3225

Authors: NOGUCHI T TSAI JA TANG AJ REIF R

Citation: T. Noguchi et al., RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI1-XGEX FILMS WITH SUBSEQUENT ANNEALING, JPN J A P 2, 33(12B), 1994, pp. 1748-1750

Authors: TANG AJ SADRA K STREETMAN BG

Citation: Aj. Tang et al., SELECTIVE ETCHING OF ALXGA1-XAS AND IN(ALXGA1-X)AS ALLOYS IN SUCCINICACID HYDROGEN-PEROXIDE SOLUTIONS, Journal of the Electrochemical Society, 140(5), 1993, pp. 82-83