Authors: ZHENG DW CUI Q HUANG YP ZHANG XJ KWOR R LI AZ TANG TA

Citation: Dw. Zheng et al., A LOW-TEMPERATURE SILICON-ON-INSULATOR FABRICATION PROCESS USING SI MBE ON DOUBLE-LAYER POROUS SILICON, Journal of the Electrochemical Society, 145(5), 1998, pp. 1668-1671

Authors: NIU GF CHEN RMM RUAN G TANG TA

Citation: Gf. Niu et al., DEFINITION OF EFFECTIVE CHANNEL-LENGTH (L-EFF) IN DEEP-SUBMICRON MOSFETS BASED ON NUMERICALLY SIMULATED SURFACE-POTENTIAL, Solid-state electronics, 41(9), 1997, pp. 1377-1382

Authors: ZHENG DW HUANG YP HE ZJ LI AZ TANG TA KWOR R CUI Q ZHANG XJ

Citation: Dw. Zheng et al., MICROSTRUCTURE, HEAT-TREATMENT, AND OXIDATION STUDY OF POROUS SILICONFORMED ON MODERATELY DOPED P-TYPE SILICON, Journal of applied physics, 81(1), 1997, pp. 492-496

Authors: CHEN Z TANG TA

Citation: Z. Chen et Ta. Tang, A C-V MODEL OF FERROELECTRIC THIN-FILM CAPACITOR, Ferroelectrics, 197(1-4), 1997, pp. 747-750

Authors: NIU GF RUAN G TANG TA

Citation: Gf. Niu et al., INVERSION CHARGE MODELING OF SIGE PMOS AND APPROACHES TO INCREASING THE HOLE DENSITY IN THE SIGE CHANNEL, Solid-state electronics, 38(2), 1995, pp. 323-329