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Results:
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Results: 12
Authors:
BERTHELOT L
MASENELLI B
GARRIGUES M
JOSEPH J
TARDY J
Citation: L. Berthelot et al., PHOTOLUMINESCENCE OF EVAPORATED PHENYLENE VINYLENE OLIGOMERS MICROCAVITIES AND SPECIFICALLY DESIGNED ALQ(3) MICROCAVITIES, Journal de chimie physique et de physico-chimie biologique, 95(6), 1998, pp. 1372-1376
Authors:
BERTHELOT L
TARDY J
GAGNAIRE A
JOSEPH J
MASENELLI B
GARRIGUES M
TRAN VH
RIGNEAULT H
Citation: L. Berthelot et al., MODIFIED SPONTANEOUS EMISSION IN OLIGO(P-PHENYLENE VINYLENE) PLANAR MICROCAVITIES, Optical materials, 9(1-4), 1998, pp. 25-33
Authors:
RADENAC G
MIRAMAND P
TARDY J
Citation: G. Radenac et al., SEARCH FOR IMPACT OF A DREDGED MATERIAL DISPOSAL SITE ON GROWTH AND METAL CONTAMINATION OF MYTILUS-EDULIS (L.) IN CHARENTE-MARITIME (FRANCE), Marine pollution bulletin, 34(9), 1997, pp. 721-729
Authors:
DELMEDICO S
BENYATTOU T
GUILLOT G
GENDRY M
OUSTRIC M
VENET T
TARDY J
HOLLINGER G
CHOVET A
MATHIEU N
Citation: S. Delmedico et al., HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/, Semiconductor science and technology, 11(4), 1996, pp. 576-581
Authors:
TARDY J
ROJOROMEO P
VIKTOROVITCH P
CREMILLIEU P
LETARTRE X
Citation: J. Tardy et al., STABILITY AND NOISE OF PD-GE-AG-AU OHMIC CONTACTS TO INGAAS-INALAS HIGH-ELECTRON-MOBILITY TRANSISTORS, Solid-state electronics, 39(2), 1996, pp. 225-229
Authors:
DROUOT V
GENDRY M
SANTINELLI C
LETARTE X
TARDY J
VIKTOROVITCH P
HOLLINGER G
AMBRI M
PITAVAL M
Citation: V. Drouot et al., DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1326-1335
Authors:
VIKTOROVITCH P
ROJOROMEO P
LECLERCQ JL
LETARTRE X
TARDY J
OUSTRIC M
GENDRY M
Citation: P. Viktorovitch et al., LOW-FREQUENCY NOISE SOURCES IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2085-2100
Authors:
VIKTOROVITCH P
TARDY J
Citation: P. Viktorovitch et J. Tardy, MICROELECTRONICS AND OPTOELECTRONICS III-V (5) - FOREWORD, Journal de physique. III, 5(5), 1995, pp. 2-2
Authors:
DELMEDICO S
BENYATTOU T
GUILLOT G
GENDRY M
OUSTRIC M
VENET T
TARDY J
HOLLINGER G
CHOVET A
MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301
Authors:
BEARZI E
DUCROQUET F
GUILLOT G
TARDY J
CANEAU C
CHAN W
BHAT R
Citation: E. Bearzi et al., DEEP-LEVEL CHARACTERIZATION OF ALXIN1-XAS LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 421-424
Authors:
KADOUN A
BREMOND G
BARBIER D
LAUGIER A
TARDY J
Citation: A. Kadoun et al., CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP, Journal of applied physics, 75(1), 1994, pp. 648-650
Authors:
KADOUN A
TARDY J
THOMAS I
GENDRY M
DROUOT V
BREMOND G
BARBIER D
LAUGIER A
Citation: A. Kadoun et al., A NEW ENCAPSULATION METHOD OF INP DURING POST IMPLANTATION ANNEALING, Applied surface science, 69(1-4), 1993, pp. 407-411
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