Authors: BARANOV AM MALOV YA TERESHIN SA

Citation: Am. Baranov et al., NEW-TYPE OF PHOTOELECTRIC CONVERTER BASED ON AN N-CDO A-C/P-SI HETEROSTRUCTURE/, Technical physics letters, 23(11), 1997, pp. 817-819

Authors: BARANOV AM TERESHIN SA MIKHAILOV IF

Citation: Am. Baranov et al., A NEW UNIVERSAL METHOD OF MONITORING LAYER PARAMETERS AND SURFACE-ROUGHNESS IN VACUUM DEPOSITION AND ETCHING PROCESSES, Technical physics, 42(8), 1997, pp. 910-912

Authors: BARU VG KOLMAKOVA TP ORMONT AB TERESHIN SA

Citation: Vg. Baru et al., SPACE LOCALIZATION, COMPOSITION AND CERTA IN PROPERTIES OF LUMINESCENT-ACTIVE LAYER IN POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 20(20), 1994, pp. 62-66

Authors: BARU VG ELINSON MI ZAKHAROV LY POKALYAKIN VI STEPANOV GV TERESHIN SA

Citation: Vg. Baru et al., ELECTROLUMINESCENCE IN THE VISIBLE SPECTR UM AREA IN SILICON COMPOSITE NANOSTRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 19(22), 1993, pp. 10-14

Authors: KOLMAKOVA TP BARU VG MALAKHOV BA ORMONT AB TERESHIN SA

Citation: Tp. Kolmakova et al., ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE IN THIN-FILMS OF POROUS SILICON, JETP letters, 57(7), 1993, pp. 410-413