Authors: THILDERKVIST A GROSSMANN G KLEVERMAN M GRIMMEISS HG

Citation: A. Thilderkvist et al., NEUTRAL INTERSTITIAL IRON CENTER IN SILICON STUDIED BY ZEEMAN SPECTROSCOPY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7723-7733

Authors: BULSARA MT YANG V THILDERKVIST A FITZGERALD EA HAUSLER K EBERL K

Citation: Mt. Bulsara et al., GRADED INXGA1-XAS GAAS 1.3 MU-M WAVELENGTH LIGHT-EMITTING DIODE STRUCTURES GROWN WITH MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 83(1), 1998, pp. 592-599

Authors: LINNARSSON M JANZEN E MONEMAR B KLEVERMAN M THILDERKVIST A

Citation: M. Linnarsson et al., ELECTRONIC-STRUCTURE OF THE GAAS-MN-GA CENTER, Physical review. B, Condensed matter, 55(11), 1997, pp. 6938-6944

Authors: THILDERKVIST A NILSSON SG KLEVERMAN M GRIMMEISS HG

Citation: A. Thilderkvist et al., TRIGONAL GOLD-PAIR CENTER IN SILICON, Physical review. B, Condensed matter, 49(24), 1994, pp. 16926-16941

Authors: THILDERKVIST A KLEVERMAN M GRIMMEISS HG

Citation: A. Thilderkvist et al., INTERSTITIAL MAGNESIUM DOUBLE DONOR IN SILICON, Physical review. B, Condensed matter, 49(23), 1994, pp. 16338-16348

Authors: THILDERKVIST A KLEVERMAN M GROSSMANN G GRIMMEISS HG

Citation: A. Thilderkvist et al., QUADRATIC ZEEMAN-EFFECT OF SHALLOW DONORS IN SILICON, Physical review. B, Condensed matter, 49(20), 1994, pp. 14270-14281