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Results: 1-8 |
Results: 8
IMPROVED MONTE-CARLO METHOD FOR THE STUDY OF ELECTRON-TRANSPORT IN DEGENERATE SEMICONDUCTORS
Authors: BOROWIK P THOBEL JL
Citation: P. Borowik et Jl. Thobel, IMPROVED MONTE-CARLO METHOD FOR THE STUDY OF ELECTRON-TRANSPORT IN DEGENERATE SEMICONDUCTORS, Journal of applied physics, 84(7), 1998, pp. 3706-3709
MONTE-CARLO STUDY OF DIFFUSION PHENOMENA IN III-V MODULATION-DOPED HETEROSTRUCTURES
Authors: SLEIMAN A THOBEL JL BOUREL P DESSENNE F FAUQUEMBERGUE R
Citation: A. Sleiman et al., MONTE-CARLO STUDY OF DIFFUSION PHENOMENA IN III-V MODULATION-DOPED HETEROSTRUCTURES, Semiconductor science and technology, 12(1), 1997, pp. 69-76
DETERMINATION OF DIFFUSION-COEFFICIENTS IN DEGENERATE ELECTRON-GAS USING MONTE-CARLO SIMULATION
Authors: THOBEL JL SLEIMAN A FAUQUEMBERGUE R
Citation: Jl. Thobel et al., DETERMINATION OF DIFFUSION-COEFFICIENTS IN DEGENERATE ELECTRON-GAS USING MONTE-CARLO SIMULATION, Journal of applied physics, 82(3), 1997, pp. 1220-1226
MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS USINGAN ANALYTICAL BAND-STRUCTURE MODEL
Authors: MOUTON O THOBEL JL FAUQUEMBERGUE R
Citation: O. Mouton et al., MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS USINGAN ANALYTICAL BAND-STRUCTURE MODEL, Journal of applied physics, 81(7), 1997, pp. 3160-3169
MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN III-V HETEROSTRUCTURES WITH DOPED QUANTUM-WELLS
Authors: THOBEL JL SLEIMAN A BOUREL P DESSENNE F BAUDRY L
Citation: Jl. Thobel et al., MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN III-V HETEROSTRUCTURES WITH DOPED QUANTUM-WELLS, Journal of applied physics, 80(2), 1996, pp. 928-935
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
MONTE-CARLO MODELING OF HIGH-FIELD TRANSPORT IN III-V HETEROSTRUCTURES
Authors: THOBEL JL BAUDRY L BOUREL P DESSENNE F CHAREF M
Citation: Jl. Thobel et al., MONTE-CARLO MODELING OF HIGH-FIELD TRANSPORT IN III-V HETEROSTRUCTURES, Journal of applied physics, 74(10), 1993, pp. 6274-6280
INFLUENCE OF THE SCREENING MODEL AND WAVE-FUNCTION SHAPE ON IMPURITY SCATTERING MOBILITY IN QUANTUM-WIRE
Authors: BAUDRY L THOBEL JL CHAREF M DESSENNE F BOUREL P
Citation: L. Baudry et al., INFLUENCE OF THE SCREENING MODEL AND WAVE-FUNCTION SHAPE ON IMPURITY SCATTERING MOBILITY IN QUANTUM-WIRE, Journal of applied physics, 74(10), 1993, pp. 6281-6288
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