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Results: 1-10 |
Results: 10
SURFACE CHEMICAL-STATES ON LPCVD-GROWN 4H-SIC EPILAYERS
Authors: WEE ATS LI K TIN CC
Citation: Ats. Wee et al., SURFACE CHEMICAL-STATES ON LPCVD-GROWN 4H-SIC EPILAYERS, Applied surface science, 126(1-2), 1998, pp. 34-42
LATERAL OVERGROWTH AND EPITAXIAL LIFT-OFF OF INP BY HALIDE VAPOR-PHASE EPITAXY
Authors: PARK J BARNES PA TIN CC ALLERMAN AA
Citation: J. Park et al., LATERAL OVERGROWTH AND EPITAXIAL LIFT-OFF OF INP BY HALIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 187(2), 1998, pp. 185-193
METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN ALN ON 6H-SIC FOR METAL-INSULATOR-SEMICONDUCTOR DEVICE APPLICATIONS
Authors: TIN CC SONG Y ISAACSSMITH T MADANGARLI V SUDARSHAN TS
Citation: Cc. Tin et al., METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN ALN ON 6H-SIC FOR METAL-INSULATOR-SEMICONDUCTOR DEVICE APPLICATIONS, Journal of electronic materials, 26(3), 1997, pp. 212-216
STRUCTURAL, OPTICAL, AND SURFACE SCIENCE STUDIES OF 4H-SIC EPILAYERS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: FENG ZC ROHATGI A TIN CC HU R WEE ATS SE KP
Citation: Zc. Feng et al., STRUCTURAL, OPTICAL, AND SURFACE SCIENCE STUDIES OF 4H-SIC EPILAYERS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 25(5), 1996, pp. 917-923
CONTROL OF ETCH PIT DENSITY IN LOW-PRESSURE-GROWN 3C-SIC SI BY VARIATION OF REACTOR PRESSURE/
Authors: TIN CC HU R PARK J ISAACSSMITH TF LUCKOWSKI E
Citation: Cc. Tin et al., CONTROL OF ETCH PIT DENSITY IN LOW-PRESSURE-GROWN 3C-SIC SI BY VARIATION OF REACTOR PRESSURE/, Journal of materials science letters, 15(9), 1996, pp. 823-825
RAMAN MICROPROBE ASSESSMENT OF LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION-GROWN 4H-SIC EPILAYERS
Authors: TIN CC HU R LIU J VOHRA Y FENG ZC
Citation: Cc. Tin et al., RAMAN MICROPROBE ASSESSMENT OF LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION-GROWN 4H-SIC EPILAYERS, Journal of crystal growth, 158(4), 1996, pp. 509-513
COMBINED RAMAN AND LUMINESCENCE ASSESSMENT OF EPITAXIAL 6H-SIC FILMS GROWN ON 6H-SIC BY LOW-PRESSURE VERTICAL CHEMICAL-VAPOR-DEPOSITION
Authors: FENG ZC TIN CC HU R YUE KT
Citation: Zc. Feng et al., COMBINED RAMAN AND LUMINESCENCE ASSESSMENT OF EPITAXIAL 6H-SIC FILMS GROWN ON 6H-SIC BY LOW-PRESSURE VERTICAL CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 10(10), 1995, pp. 1418-1422
RAMAN AND RUTHERFORD BACKSCATTERING ANALYSES OF CUBIC SIC THIN-FILMS GROWN ON SI BY VERTICAL CHEMICAL-VAPOR-DEPOSITION
Authors: FENG ZC TIN CC WILLIAMS J
Citation: Zc. Feng et al., RAMAN AND RUTHERFORD BACKSCATTERING ANALYSES OF CUBIC SIC THIN-FILMS GROWN ON SI BY VERTICAL CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 266(1), 1995, pp. 1-7
REDUCTION OF ETCH PITS IN HETEROEPITAXIAL GROWTH OF 3C-SIC ON SILICON
Authors: TIN CC HU R COSTON RL PARK J
Citation: Cc. Tin et al., REDUCTION OF ETCH PITS IN HETEROEPITAXIAL GROWTH OF 3C-SIC ON SILICON, Journal of crystal growth, 148(1-2), 1995, pp. 116-124
SURFACE CHEMICAL-STATES ON 3C-SIC SI EPILAYERS/
Authors: WEE ATS FENG ZC HNG HH TAN KL TIN CC HU R COSTON R
Citation: Ats. Wee et al., SURFACE CHEMICAL-STATES ON 3C-SIC SI EPILAYERS/, Applied surface science, 81(4), 1994, pp. 377-385
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