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Results: 1-7 |
Results: 7

Authors: KROTKUS A PASISKEVICIUS V LIDEIKIS T TREIDERIS G LESCINSKAS D JASUTIS V
Citation: A. Krotkus et al., ULTRAFAST PHOTOCONDUCTORS FROM LOW-TEMPERATURE MOCVD-GROWN GAAS AND INGAAS EPITAXIAL LAYERS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 177-181

Authors: KACIULIS S MATTOGNO G TREIDERIS G VITICOLI S
Citation: S. Kaciulis et al., XPS STUDY OF THE INXGA1-XAS GAAS SUPERLATTICE, Journal of electron spectroscopy and related phenomena, 70(2), 1994, pp. 145-149

Authors: DAPKUS L JASUTIS V KACIULIS S LESCINSKAS D MATTOGNO G STAKVILEVICIUS L TREIDERIS G VITICOLI S
Citation: L. Dapkus et al., CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES, Journal of applied physics, 76(10), 1994, pp. 5738-5743

Authors: KAVALIAUSKAS J KRIVAITE G LIDEIKIS T SIMKIENE I TREIDERIS G OLIN U OTTOSSON M
Citation: J. Kavaliauskas et al., ELECTROREFLECTANCE STUDIES OF INGAAS GAAS ASYMMETRIC STEP QUANTUM-WELLS/, Semiconductor science and technology, 8(10), 1993, pp. 1875-1880

Authors: WANG SM OLSSON E TREIDERIS G ANDERSSON TG
Citation: Sm. Wang et al., DETERMINATION OF IN COMPOSITION IN MOLECULAR-BEAM EPITAXY GROWN INXGA1-XAS GAAS HETEROSTRUCTURES/, Journal of crystal growth, 127(1-4), 1993, pp. 616-618

Authors: MARCINKEVICIUS S OLIN U TREIDERIS G
Citation: S. Marcinkevicius et al., ROOM-TEMPERATURE CARRIER RECOMBINATION IN INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 74(5), 1993, pp. 3587-3589

Authors: MARCINKEVICIUS S OLIN U OTTOSSON M TREIDERIS G SIMKIENE I LIDEIKIS T
Citation: S. Marcinkevicius et al., STARK SHIFT OF THE INTERBAND-TRANSITIONS IN ASYMMETRIC STEP INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 73(9), 1993, pp. 4691-4693
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