AAAAAA

   
Results: 1-20 |
Results: 20
THE RELATIONSHIP BETWEEN OPEN VOLUME DEFECTS AND DEPOSITION CONDITIONS OF SUPERCONDUCTING THIN-FILM YBA2CU3O7-X
Authors: ZHOU XY LU XK JIANG H BAUERKUGELMANN W DUFFY JA KOGEL G TRIFTSHAUSER W
Citation: Xy. Zhou et al., THE RELATIONSHIP BETWEEN OPEN VOLUME DEFECTS AND DEPOSITION CONDITIONS OF SUPERCONDUCTING THIN-FILM YBA2CU3O7-X, Journal of physics. Condensed matter, 9(6), 1997, pp. 61-66
POSITRON TRAPPING IN A COEVAPORATION EPITAXIAL SUPERCONDUCTING THIN-FILM YBA2CU3O7-X
Authors: ZHOU XY BAUERKUGELMANN W STORMER J KOGEL G TRIFTSHAUSER W
Citation: Xy. Zhou et al., POSITRON TRAPPING IN A COEVAPORATION EPITAXIAL SUPERCONDUCTING THIN-FILM YBA2CU3O7-X, Physics letters. A, 225(1-3), 1997, pp. 143-148
A HIGH INTENSE REACTOR BASED POSITRON SOURCE
Authors: TRIFTSHAUSER G KOGEL G TRIFTSHAUSER W SPRINGER M STRASSER B SCHRECKENBACH K
Citation: G. Triftshauser et al., A HIGH INTENSE REACTOR BASED POSITRON SOURCE, Applied surface science, 116, 1997, pp. 45-48
PULSING OF LOW-ENERGY POSITRON BEAMS
Authors: SPERR P KOGEL G WILLUTZKI P TRIFTSHAUSER W
Citation: P. Sperr et al., PULSING OF LOW-ENERGY POSITRON BEAMS, Applied surface science, 116, 1997, pp. 78-81
DEFECT SPECTROSCOPY IN DIAMOND, A NEW MODEL FOR POSITRON TRAPPING IN INSULATORS
Authors: SHI M WAEBER WB TRIFTSHAUSER W
Citation: M. Shi et al., DEFECT SPECTROSCOPY IN DIAMOND, A NEW MODEL FOR POSITRON TRAPPING IN INSULATORS, Applied surface science, 116, 1997, pp. 203-210
DIFFUSIVITY AND SURFACE TRANSITION RATE OF POSITRONS IN CRYSTALLINE SILICON AS A FUNCTION OF DOPANT CONCENTRATION
Authors: BAUERKUGELMANN W DUFFY JA STORMER J KOGEL G TRIFTSHAUSER W
Citation: W. Bauerkugelmann et al., DIFFUSIVITY AND SURFACE TRANSITION RATE OF POSITRONS IN CRYSTALLINE SILICON AS A FUNCTION OF DOPANT CONCENTRATION, Applied surface science, 116, 1997, pp. 231-235
INVESTIGATION OF BAND BENDING IN SILICON BY SLOW POSITRON LIFETIME MEASUREMENTS
Authors: DUFFY JA BAUERKUGELMANN W KOGEL G TRIFTSHAUSER W
Citation: Ja. Duffy et al., INVESTIGATION OF BAND BENDING IN SILICON BY SLOW POSITRON LIFETIME MEASUREMENTS, Applied surface science, 116, 1997, pp. 241-246
A SCANNING POSITRON MICROSCOPE FOR DEFECT ANALYSIS IN MATERIALS SCIENCE
Authors: TRIFTSHAUSER W KOGEL G SPERR P BRITTON DT UHLMANN K WILLUTZKI P
Citation: W. Triftshauser et al., A SCANNING POSITRON MICROSCOPE FOR DEFECT ANALYSIS IN MATERIALS SCIENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 264-269
SILICON-CARBIDE - A NEW POSITRON MODERATOR
Authors: STORMER J GOODYEAR A ANWAND W BRAUER G COLEMAN PG TRIFTSHAUSER W
Citation: J. Stormer et al., SILICON-CARBIDE - A NEW POSITRON MODERATOR, Journal of physics. Condensed matter, 8(7), 1996, pp. 89-94
POSITRON-ANNIHILATION IN THE EPITAXIAL SUPERCONDUCTING THIN-FILM GDBA2CU3O7-DELTA STUDIED BY USING A PULSED POSITRON BEAM
Authors: ZHOU XY STORMER J WANG RL KEIMEL J LI HC KOGEL G TRIFTSHAUSER W
Citation: Xy. Zhou et al., POSITRON-ANNIHILATION IN THE EPITAXIAL SUPERCONDUCTING THIN-FILM GDBA2CU3O7-DELTA STUDIED BY USING A PULSED POSITRON BEAM, Physical review. B, Condensed matter, 54(2), 1996, pp. 1398-1403
VACANCY-TYPE DEFECTS IN MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE-GROWN GAAS, A POSITRON BEAM LIFETIME STUDY
Authors: STORMER J TRIFTSHAUSER W HOZHABRI N ALAVI K
Citation: J. Stormer et al., VACANCY-TYPE DEFECTS IN MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE-GROWN GAAS, A POSITRON BEAM LIFETIME STUDY, Applied physics letters, 69(13), 1996, pp. 1867-1869
POSITRON FACILITIES IN EUROPE
Authors: TRIFTSHAUSER W
Citation: W. Triftshauser, POSITRON FACILITIES IN EUROPE, Journal de physique. IV, 5(C1), 1995, pp. 217-226
INVESTIGATIONS OF POSITRON LIFETIMES IN INP WITH A PULSED POSITRON BEAM
Authors: WILLUTZKI P STORMER J BRITTON DT TRIFTSHAUSER W
Citation: P. Willutzki et al., INVESTIGATIONS OF POSITRON LIFETIMES IN INP WITH A PULSED POSITRON BEAM, Applied physics A: Materials science & processing, 61(3), 1995, pp. 321-324
A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE
Authors: STORMER J WILLUTZKI P BRITTON DT KOGEL G TRIFTSHAUSER W KIUNKE W WITTMANN F EISELE I
Citation: J. Stormer et al., A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 71-74
A CONCEPT OF A SCANNING POSITRON MICROSCOPE
Authors: UHLMANN K TRIFTSHAUSER W KOGEL G SPERR P BRITTON DT ZECCA A BRUSA RS KARWASZ G
Citation: K. Uhlmann et al., A CONCEPT OF A SCANNING POSITRON MICROSCOPE, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 594-597
A PULSED POSITRON MICROBEAM
Authors: ZECCA A BRUSA RS DUARTENAIA MP KARWASZ GP PARIDAENS J PIAZZA A KOGEL G SPERR P BRITTON DT UHLMANN K WILLUTZKI P TRIFTSHAUSER W
Citation: A. Zecca et al., A PULSED POSITRON MICROBEAM, Europhysics letters, 29(8), 1995, pp. 617-622
AN IMPROVED PULSED LOW-ENERGY POSITRON SYSTEM
Authors: WILLUTZKI P STORMER J KOGEL G SPERR P BRITTON DT STEINDL R TRIFTSHAUSER W
Citation: P. Willutzki et al., AN IMPROVED PULSED LOW-ENERGY POSITRON SYSTEM, Measurement science & technology, 5(5), 1994, pp. 548-554
ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES
Authors: BRITTON DT WILLUTZKI P TRIFTSHAUSER W HAMMERL E HANSCH W EISELE I
Citation: Dt. Britton et al., ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 389-393
A STUDY OF THE FERMI SURFACES OF LITHIUM AND DISORDERED LITHIUM MAGNESIUM ALLOYS - THEORY AND EXPERIMENT
Authors: RAJPUT SS PRASAD R SINGRU RM TRIFTSHAUSER W ECKERT A KOGEL G KAPRZYK S BANSIL A
Citation: Ss. Rajput et al., A STUDY OF THE FERMI SURFACES OF LITHIUM AND DISORDERED LITHIUM MAGNESIUM ALLOYS - THEORY AND EXPERIMENT, Journal of physics. Condensed matter, 5(35), 1993, pp. 6419-6432
INVESTIGATION OF DEFECT STRUCTURES IN DEFORMED AND HELIUM-IRRADIATED REFRACTORY-METALS BY POSITRON-ANNIHILATION
Authors: KOGEL G SPERR P STORMER J TRIFTSHAUSER W
Citation: G. Kogel et al., INVESTIGATION OF DEFECT STRUCTURES IN DEFORMED AND HELIUM-IRRADIATED REFRACTORY-METALS BY POSITRON-ANNIHILATION, Journal of physics. Condensed matter, 5(23), 1993, pp. 3987-4006
Risultati: 1-20 |