AAAAAA
Results:
1-7
|
Results: 7
Authors:
MCNALLY PJ
TUOMI T
HERBERT PAF
BARIC A
AYRAS P
KARILAHTI M
LIPSANEN H
TROMBY M
Citation: Pj. Mcnally et al., SYNCHROTRON X-RAY TOPOGRAPHIC ANALYSIS OF THE IMPACT OF PROCESSING STEPS ON THE FABRICATION OF ALGAAS INGAAS P-HEMTS/, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1085-1091
Authors:
RITCHIE DM
DIPAOLA A
TROMBY M
DELLAGIOVANNI M
DIEGIDIO M
VIDIMARI F
Citation: Dm. Ritchie et al., SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY (VOL 145, PG 447, 1994), Journal of crystal growth, 153(1-2), 1995, pp. 68-68
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION(VOL 76, PG 5085, 1994), Journal of applied physics, 77(8), 1995, pp. 4159-4159
Authors:
TROMBY M
DIPAOLA A
RITCHIE DM
DELLAGIOVANNA M
DIEGIDIO M
VIDIMARI F
Citation: M. Tromby et al., SI DELTA-DOPED GAAS AND ALGAAS BY LOW-PRESSURE MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 204-208
Authors:
RITCHIE DM
DIPAOLA A
TROMBY M
DELLAGIOVANNA M
DIEGIDIO M
VIDIMARI F
Citation: Dm. Ritchie et al., SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 447-454
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION, Journal of applied physics, 76(9), 1994, pp. 5085-5094
Authors:
GASPAROTTO A
CARNERA A
ARZENTON G
TROMBY M
PELLEGRINO S
VIDIMARI F
CALDIRONI M
Citation: A. Gasparotto et al., ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 773-776
Risultati:
1-7
|