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Results: 1-10 |
Results: 10
EVOLUTION OF FILM STRESS WITH ACCUMULATION OF MISFIT DISLOCATIONS AT SEMICONDUCTOR INTERFACES
Authors: TRUKHANOV EM FRITZLER KB LYUBAS GA KOLESNIKOV AV
Citation: Em. Trukhanov et al., EVOLUTION OF FILM STRESS WITH ACCUMULATION OF MISFIT DISLOCATIONS AT SEMICONDUCTOR INTERFACES, Applied surface science, 123, 1998, pp. 664-668
FILM QUALITY EFFECTS ASSOCIATED WITH FORMATION OF MISFIT DISLOCATIONSAT SEMICONDUCTOR INTERFACES
Authors: TRUKHANOV EM KOLESNIKOV AV
Citation: Em. Trukhanov et Av. Kolesnikov, FILM QUALITY EFFECTS ASSOCIATED WITH FORMATION OF MISFIT DISLOCATIONSAT SEMICONDUCTOR INTERFACES, Applied surface science, 123, 1998, pp. 669-673
GROWTH AND REAL STRUCTURE OF KTIOASO4 CRYSTALS FROM SELF-FLUXES
Authors: ISAENKO LI MERKULOV AA TJURIKOV VI ATUCHIN VV SOKOLOV LV TRUKHANOV EM
Citation: Li. Isaenko et al., GROWTH AND REAL STRUCTURE OF KTIOASO4 CRYSTALS FROM SELF-FLUXES, Journal of crystal growth, 171(1-2), 1997, pp. 146-153
LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223
HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES, Journal of applied physics, 79(10), 1996, pp. 7636-7639
INVESTIGATION OF SUPERLATTICE PERIOD INHOMOGENEITY USING QUANTITATIVESYNCHROTRON DIFFRACTION TOPOGRAPHY
Authors: AMIRZHANOV RM TRUKHANOV EM
Citation: Rm. Amirzhanov et Em. Trukhanov, INVESTIGATION OF SUPERLATTICE PERIOD INHOMOGENEITY USING QUANTITATIVESYNCHROTRON DIFFRACTION TOPOGRAPHY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 359(1-2), 1995, pp. 178-180
LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES
Authors: BOLKHOVITYANOV YB GILINSKY AM NOMEROTSKY NV TRUKHANOV EM JAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES, Journal of crystal growth, 149(1-2), 1995, pp. 17-22
LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES
Authors: BOLKHOVITYANOV YB ALPEROVICH VL JAROSHEVICH AS NOMEROTSKY NV PAULISH AG TEREKHOV AS TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313
INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2486-2487
PSEUDOMORPHOUS TENSED INGAASP FILMS WITH ELASTIC DEFORMATIONS OF 0.85-PERCENT AND WIDTH OF 0.1-0.3 MU-M PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE
Authors: BOLKHOVITYANOV YB GILINSKII AM NOMEROTSKII NV TRUKHANOV EM YAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., PSEUDOMORPHOUS TENSED INGAASP FILMS WITH ELASTIC DEFORMATIONS OF 0.85-PERCENT AND WIDTH OF 0.1-0.3 MU-M PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(13), 1993, pp. 5-8
Risultati: 1-10 |