Citation: T. Noguchi et al., COMPARISON OF EFFECTS BETWEEN LARGE-AREA-BEAM ELA AND SPC ON TFT CHARACTERISTICS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1454-1458
Citation: T. Noguchi et al., RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI(1-X)G(X) FILMS WITH SUBSEQUENT ANNEALING (VOL 33, PG L1748, 1994), JPN J A P 2, 34(3A), 1995, pp. 338-338
Citation: Ja. Tsai et al., EFFECTS OF GE ON MATERIAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI1-XGEX FOR THIN-FILM TRANSISTORS, Journal of the Electrochemical Society, 142(9), 1995, pp. 3220-3225
Citation: Ja. Tsai et R. Reif, POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON OXIDE USING PLASMA-ENHANCED VERY-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(14), 1995, pp. 1809-1811
Citation: T. Noguchi et al., RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI1-XGEX FILMS WITH SUBSEQUENT ANNEALING, JPN J A P 2, 33(12B), 1994, pp. 1748-1750