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OXIDATION OF THE GAAS(110) SURFACE
Authors: TSAI MH PACKARD WE DOW JD KASOWSKI RV
Citation: Mh. Tsai et al., OXIDATION OF THE GAAS(110) SURFACE, Physica. B, Condensed matter, 192(4), 1993, pp. 365-370
1 F NOISE IN HOT-CARRIER DAMAGED MOSFETS - EFFECTS OF OXIDE CHARGE AND INTERFACE TRAPS/
Authors: TSAI MH MA TP
Citation: Mh. Tsai et Tp. Ma, 1 F NOISE IN HOT-CARRIER DAMAGED MOSFETS - EFFECTS OF OXIDE CHARGE AND INTERFACE TRAPS/, IEEE electron device letters, 14(5), 1993, pp. 256-258
INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/
Authors: BALASINSKI A TSAI MH VISHNUBHOTLA L MA TP TSENG HH TOBIN PJ
Citation: A. Balasinski et al., INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/, Microelectronic engineering, 22(1-4), 1993, pp. 97-100
A STRAIGHT DOMAIN BOUNDARY OF SINGLE-ATOM WIDTH ON A SI(111)-(7X7) SURFACE
Authors: WEI Y TSAI MH DOW JD TSONG IST
Citation: Y. Wei et al., A STRAIGHT DOMAIN BOUNDARY OF SINGLE-ATOM WIDTH ON A SI(111)-(7X7) SURFACE, Surface science, 296(1), 1993, pp. 120000015-120000020
RANDOM TELEGRAPH SIGNALS ARISING FROM FAST INTERFACE STATES IN METAL-SIO2-SI TRANSISTORS - REPLY
Authors: TSAI MH MUTO H MA TP
Citation: Mh. Tsai et al., RANDOM TELEGRAPH SIGNALS ARISING FROM FAST INTERFACE STATES IN METAL-SIO2-SI TRANSISTORS - REPLY, Applied physics letters, 63(10), 1993, pp. 1445-1445
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