Authors: ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D

Citation: Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196

Authors: ALFEROV ZI GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV KOMIN VV KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV RUVIMOV SS SAKHAROV AV TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D

Citation: Zi. Alferov et al., A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS, Semiconductors, 30(2), 1996, pp. 197-200

Authors: USTINOV VM EGOROV AY ZHUKOV AE FALEEV NN TSAPULNIKOV AF KOPEV PS

Citation: Vm. Ustinov et al., EFFECT OF GROWTH TEMPERATURE ON THE ELECTRON-MOBILITY IN INALAS INGAAS TRANSISTOR STRUCTURES GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Semiconductors, 29(8), 1995, pp. 750-753