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Results: 1-7 |
Results: 7

Authors: TSEREPI A GOGOLIDES E CARDINAUD C ROLLAND L TURBAN G
Citation: A. Tserepi et al., HIGHLY ANISOTROPIC SILICON AND POLYSILICON ROOM-TEMPERATURE ETCHING USING FLUORINE-BASED HIGH-DENSITY PLASMAS, Microelectronic engineering, 42, 1998, pp. 411-414

Authors: NORMAND P TSOUKALAS D AIDINIS C TSEREPI A KOUVATSOS D KAPETANAKIS E
Citation: P. Normand et al., FABRICATION OF SI NANO-WIRES USING ANISOTROPIC DRY AND WET ETCHING, Microelectronic engineering, 42, 1998, pp. 551-554

Authors: GICQUEL A CHENEVIER M HASSOUNI K TSEREPI A DUBUS M
Citation: A. Gicquel et al., VALIDATION OF ACTINOMETRY FOR ESTIMATING RELATIVE HYDROGEN-ATOM DENSITIES AND ELECTRON-ENERGY EVOLUTION IN PLASMA-ASSISTED DIAMOND DEPOSITION REACTORS, Journal of applied physics, 83(12), 1998, pp. 7504-7521

Authors: SCHWARZENBACH W TSEREPI A DEROUARD J SADEGHI N
Citation: W. Schwarzenbach et al., MASS-SPECTROMETRIC DETECTION OF F-ATOMS AND CFX RADICALS IN CF4 PLASMAS, JPN J A P 1, 36(7B), 1997, pp. 4644-4647

Authors: TSEREPI A SCHWARZENBACH W DEROUARD J SADEGHI N
Citation: A. Tserepi et al., KINETICS OF F ATOMS AND FLUOROCARBON RADICALS STUDIED BY THRESHOLD IONIZATION MASS-SPECTROMETRY IN A MICROWAVE CF4 PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3120-3126

Authors: GRUN M SADEGHI N CIBERT J GENUIST Y TSEREPI A
Citation: M. Grun et al., DOPING EFFICIENCY AND PLASMA ANALYSIS OF A NITROGEN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of crystal growth, 159(1-4), 1996, pp. 284-288

Authors: PREPPERNAU BL PEARCE K TSEREPI A WURZBERG E MILLER TA
Citation: Bl. Preppernau et al., ANGULAR-MOMENTUM STATE MIXING AND QUENCHING OF N=3 ATOMIC-HYDROGEN FLUORESCENCE, Chemical physics, 196(1-2), 1995, pp. 371-381
Risultati: 1-7 |