Authors: TSIDILKOVSKII IM KULEEV IG LERINMAN NK LONCHAKOV AT SABIRZYANOVA LD PARANCHICH SY

Citation: Im. Tsidilkovskii et al., ELECTRON-TRANSPORT IN GAPLESS SEMICONDUCTORS DOPED WITH SPATIALLY CORRELATED AND SPATIALLY DISORDERED IMPURITIES, Semiconductors, 30(12), 1996, pp. 1101-1107

Authors: TSIDILKOVSKII IM KULEEV IG SHTRAPENIN GL

Citation: Im. Tsidilkovskii et al., THE VIOLATION OF MATTHIESSENS-RULE IN GAP LESS SEMICONDUCTORS CONTAINING IMPURITIES WITH MIXED-VALENCY, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(4), 1996, pp. 472-474

Authors: KULEEV IG LYAPILIN II LONCHAKOV AT TSIDILKOVSKII IM

Citation: Ig. Kuleev et al., NONELASTIC ELECTRON-SCATTERING IN HGSE-FE CRYSTALS, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 106(4), 1994, pp. 1205-1218

Authors: KULEEV IG LYAPININ II LONCHAKOV AT TSIDILKOVSKII IM

Citation: Ig. Kuleev et al., EFFECT OF PHONON DRAG OF ELECTRONS ON THERMOELECTRIC AND THERMOMAGNETIC EFFECTS IN IRON-DOPED MERCURY SELENIDE, Semiconductors, 28(6), 1994, pp. 544-549

Authors: KULEEV IG LONCHAKOV AT LYAPILIN II TSIDILKOVSKII IM

Citation: Ig. Kuleev et al., THERMOMAGNETIC EFFECTS IN MERCURY SELENID E, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 103(4), 1993, pp. 1447-1459

Authors: KULEEV IG LERINMAN NK LYAPILIN II SABIRZYANOVA LD TSIDILKOVSKII IM

Citation: Ig. Kuleev et al., WHY THE LOW-TEMPERATURE MOBILITY OF ELECTRONS IN HGSEFE IS CONSTANT, Semiconductors, 27(3), 1993, pp. 292-293