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Results: 1-13 |
Results: 13
ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/
Authors: KRIBES Y HARRISON I TUCK B CHENG TS FOXON CT
Citation: Y. Kribes et al., ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/, Journal of crystal growth, 190, 1998, pp. 773-777
MATHEMATICAL-MODELING OF THERMAL EFFECTS IN SEMICONDUCTOR-LASER OPERATION
Authors: SMITH WR KING JR TUCK B
Citation: Wr. Smith et al., MATHEMATICAL-MODELING OF THERMAL EFFECTS IN SEMICONDUCTOR-LASER OPERATION, IEE proceedings. Optoelectronics, 144(6), 1997, pp. 389-396
INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRIBES Y HARRISON I TUCK B CHENG TS FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 913-916
INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRIBES Y HARRISON I TUCK B KIM KS CHENG TS FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(11), 1997, pp. 1500-1505
DOCUMENT DELIVERY IN AN ELECTRONIC WORLD
Authors: TUCK B
Citation: B. Tuck, DOCUMENT DELIVERY IN AN ELECTRONIC WORLD, Interlending & document supply, 25(1), 1997, pp. 11
ISSUES IN ELECTRONIC DOCUMENT DELIVERY
Authors: FISHER RA TUCK B
Citation: Ra. Fisher et B. Tuck, ISSUES IN ELECTRONIC DOCUMENT DELIVERY, Interlending & document supply, 25(1), 1997, pp. 18
TEACHER STRESS IN INTERMEDIATE SCHOOLS
Authors: MANTHEI R GILMORE A TUCK B ADAIR V
Citation: R. Manthei et al., TEACHER STRESS IN INTERMEDIATE SCHOOLS, Educational research, 38(1), 1996, pp. 3-19
MATHEMATICAL-MODELING OF THE INTERSTITIALCY DIFFUSION MECHANISM
Authors: KING JR SHARP TE TUCK B ROGERS TG
Citation: Jr. King et al., MATHEMATICAL-MODELING OF THE INTERSTITIALCY DIFFUSION MECHANISM, Proceedings - Royal Society. Mathematical and physical sciences, 450(1940), 1995, pp. 623-649
ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES
Authors: BABAALI N HARRISON I TUCK B
Citation: N. Babaali et al., ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES, Journal of materials science. Materials in electronics, 6(3), 1995, pp. 127-134
MATHEMATICAL-MODELING OF THE DIFFUSION-INDUCED DISORDERING OF A SEMICONDUCTOR SUPERLATTICE
Authors: KING JR SHARP TE TUCK B ROGERS TG
Citation: Jr. King et al., MATHEMATICAL-MODELING OF THE DIFFUSION-INDUCED DISORDERING OF A SEMICONDUCTOR SUPERLATTICE, Quarterly Journal of Mechanics and Applied Mathematics, 48, 1995, pp. 583-610
2-DIMENSIONAL TEMPERATURE MODELING OF DH LASER-DIODES USING THE TRANSMISSION-LINE MODELING (TLM) METHOD
Authors: AITSADI R LOWERY AJ TUCK B
Citation: R. Aitsadi et al., 2-DIMENSIONAL TEMPERATURE MODELING OF DH LASER-DIODES USING THE TRANSMISSION-LINE MODELING (TLM) METHOD, IEE proceedings. A, Science, measurement and technology, 141(1), 1994, pp. 7-14
ADOLESCENTS ATTITUDE TOWARD GENDER-ROLES WITHIN WORK AND ITS RELATIONSHIP TO GENDER, PERSONALITY TYPE, AND PARENTAL OCCUPATION
Authors: TUCK B ROLFE J ADAIR V
Citation: B. Tuck et al., ADOLESCENTS ATTITUDE TOWARD GENDER-ROLES WITHIN WORK AND ITS RELATIONSHIP TO GENDER, PERSONALITY TYPE, AND PARENTAL OCCUPATION, Sex roles, 31(9-10), 1994, pp. 547-558
THE EFFECT OF ARSENIC PRESSURE ON THE DIFFUSION-INDUCED DISORDERING OF TIN IN ALAS GAAS SUPERLATTICES
Authors: HO HP HARRISON I BABAALI N TUCK B HENINI M
Citation: Hp. Ho et al., THE EFFECT OF ARSENIC PRESSURE ON THE DIFFUSION-INDUCED DISORDERING OF TIN IN ALAS GAAS SUPERLATTICES, Journal of materials science. Materials in electronics, 2(3), 1991, pp. 137-140
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