Citation: Wr. Smith et al., MATHEMATICAL-MODELING OF THERMAL EFFECTS IN SEMICONDUCTOR-LASER OPERATION, IEE proceedings. Optoelectronics, 144(6), 1997, pp. 389-396
Authors:
KRIBES Y
HARRISON I
TUCK B
CHENG TS
FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 913-916
Authors:
KRIBES Y
HARRISON I
TUCK B
KIM KS
CHENG TS
FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(11), 1997, pp. 1500-1505
Citation: Jr. King et al., MATHEMATICAL-MODELING OF THE INTERSTITIALCY DIFFUSION MECHANISM, Proceedings - Royal Society. Mathematical and physical sciences, 450(1940), 1995, pp. 623-649
Citation: N. Babaali et al., ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES, Journal of materials science. Materials in electronics, 6(3), 1995, pp. 127-134
Citation: Jr. King et al., MATHEMATICAL-MODELING OF THE DIFFUSION-INDUCED DISORDERING OF A SEMICONDUCTOR SUPERLATTICE, Quarterly Journal of Mechanics and Applied Mathematics, 48, 1995, pp. 583-610
Citation: R. Aitsadi et al., 2-DIMENSIONAL TEMPERATURE MODELING OF DH LASER-DIODES USING THE TRANSMISSION-LINE MODELING (TLM) METHOD, IEE proceedings. A, Science, measurement and technology, 141(1), 1994, pp. 7-14
Citation: B. Tuck et al., ADOLESCENTS ATTITUDE TOWARD GENDER-ROLES WITHIN WORK AND ITS RELATIONSHIP TO GENDER, PERSONALITY TYPE, AND PARENTAL OCCUPATION, Sex roles, 31(9-10), 1994, pp. 547-558
Authors:
HO HP
HARRISON I
BABAALI N
TUCK B
HENINI M
Citation: Hp. Ho et al., THE EFFECT OF ARSENIC PRESSURE ON THE DIFFUSION-INDUCED DISORDERING OF TIN IN ALAS GAAS SUPERLATTICES, Journal of materials science. Materials in electronics, 2(3), 1991, pp. 137-140