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THE EFFECT OF PRODUCTION CONDITIONS FOR IN-SITU PHOSPHORUS-DOPED LPCVD POLYSILICON IN MONOSILANE PHOSPHINE SYSTEM ON THE DEPOSITION PROCESSKINETICS
Authors: TURTSEVICH AS KRASNITSKY VY EMELYANOV VA NALIVAIKO OY KRAVTSOV SV
Citation: As. Turtsevich et al., THE EFFECT OF PRODUCTION CONDITIONS FOR IN-SITU PHOSPHORUS-DOPED LPCVD POLYSILICON IN MONOSILANE PHOSPHINE SYSTEM ON THE DEPOSITION PROCESSKINETICS, Thin solid films, 248(1), 1994, pp. 28-31
THE STRUCTURE, MORPHOLOGY AND RESISTIVITY OF IN-SITU PHOSPHORUS-DOPEDPOLYSILICON FILMS
Authors: LESNIKOVA VP TURTSEVICH AS KRASNITSKY VY EMELYANOV VA NALIVAIKO OY KRAVTSOV SV MAKAREVICH TV
Citation: Vp. Lesnikova et al., THE STRUCTURE, MORPHOLOGY AND RESISTIVITY OF IN-SITU PHOSPHORUS-DOPEDPOLYSILICON FILMS, Thin solid films, 247(2), 1994, pp. 156-161
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