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Results: 1-12 |
Results: 12
High resolution photoemission spectroscopy study near the Fermi edge for different surfaces prepared on the icosahedral AlPdMn phase
Authors: Schaub, T Delahaye, J Berger, C Guyot, H Belkhou, R Taleb-Ibrahimi, A Calvayrac, Y
Citation: T. Schaub et al., High resolution photoemission spectroscopy study near the Fermi edge for different surfaces prepared on the icosahedral AlPdMn phase, EUR PHY J B, 20(2), 2001, pp. 183-188
Adsorption sites at Cs nanowires grown on the InAs(110) surface
Authors: Betti, MG Corradini, V Bertoni, G Gardonio, S Mariani, C Gavioli, L Belkhou, R Taleb-Ibrahimi, A
Citation: Mg. Betti et al., Adsorption sites at Cs nanowires grown on the InAs(110) surface, SURF SCI, 477(1), 2001, pp. 35-42
Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation
Authors: Jolly, F Rochet, F Dufour, G Grupp, C Taleb-Ibrahimi, A
Citation: F. Jolly et al., Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation, J NON-CRYST, 280(1-3), 2001, pp. 150-155
Transient charge carrier distribution at UV-photoexcited SiO2/Si interfaces
Authors: Marsi, M Belkhou, R Grupp, C Panaccione, G Taleb-Ibrahimi, A Nahon, L Garzella, D Nutarelli, D Renault, E Roux, R Couprie, ME Billardon, M
Citation: M. Marsi et al., Transient charge carrier distribution at UV-photoexcited SiO2/Si interfaces, PHYS REV B, 61(8), 2000, pp. R5070-R5073
High resolution experiment on the electronic density of states in icosahedral-Al-Pd-Mn
Authors: Schaub, T Delahaye, J Berger, C Grenet, T Guyot, H Belkhou, R Taleb-Ibrahimi, A Prejean, JJ Calvayrac, Y
Citation: T. Schaub et al., High resolution experiment on the electronic density of states in icosahedral-Al-Pd-Mn, MAT SCI E A, 294, 2000, pp. 512-515
Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
Authors: Aristov, VY Zhilin, VM Grupp, C Taleb-Ibrahimi, A Kim, HJ Mangat, PS Soukiassian, P Le Lay, G
Citation: Vy. Aristov et al., Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces, APPL SURF S, 166(1-4), 2000, pp. 263-267
Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation
Authors: Jolly, F Rochet, F Dufour, G Grupp, C Taleb-Ibrahimi, A
Citation: F. Jolly et al., Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation, SURF SCI, 463(2), 2000, pp. 102-108
Core-level broadening mechanisms at silicon surfaces
Authors: Grupp, C Taleb-Ibrahimi, A
Citation: C. Grupp et A. Taleb-ibrahimi, Core-level broadening mechanisms at silicon surfaces, J ELEC SPEC, 103, 1999, pp. 309-313
Applications of UV-storage ring free electron lasers: the case of super-ACO
Authors: Nahon, L Renault, E Couprie, ME Merola, F Dumas, P Marsi, M Taleb-Ibrahimi, A Nutarelli, D Roux, R Billardon, M
Citation: L. Nahon et al., Applications of UV-storage ring free electron lasers: the case of super-ACO, NUCL INST A, 429(1-3), 1999, pp. 489-496
Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface
Authors: Aristov, VY Enriquez, H Derycke, V Soukiassian, P Le Lay, G Grupp, C Taleb-Ibrahimi, A
Citation: Vy. Aristov et al., Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface, PHYS REV B, 60(24), 1999, pp. 16553-16557
Direct measurement of quantum-state dispersion in an accumulation layer ata semiconductor surface
Authors: Aristov, VY Le Lay, G Zhilin, VM Indlekofer, G Grupp, C Taleb-Ibrahimi, A Soukiassian, P
Citation: Vy. Aristov et al., Direct measurement of quantum-state dispersion in an accumulation layer ata semiconductor surface, PHYS REV B, 60(11), 1999, pp. 7752-7755
Hydrogen-modified metal-silicon interfaces
Authors: Grupp, C Taleb-Ibrahimi, A
Citation: C. Grupp et A. Taleb-ibrahimi, Hydrogen-modified metal-silicon interfaces, SURF SCI, 435, 1999, pp. 585-589
Risultati: 1-12 |