Authors:
Simin, G
Hu, X
Ilinskaya, N
Zhang, J
Tarakji, A
Kumar, A
Yang, J
Khan, MA
Gaska, R
Shur, MS
Citation: G. Simin et al., Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging, IEEE ELEC D, 22(2), 2001, pp. 53-55
Authors:
Hu, X
Koudymov, A
Simin, G
Yang, J
Khan, MA
Tarakji, A
Shur, MS
Gaska, R
Citation: X. Hu et al., Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effecttransistors, APPL PHYS L, 79(17), 2001, pp. 2832-2834
Authors:
Simin, G
Koudymov, A
Tarakji, A
Hu, X
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: G. Simin et al., Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors, APPL PHYS L, 79(16), 2001, pp. 2651-2653
Authors:
Tarakji, A
Simin, G
Ilinskaya, N
Hu, X
Kumar, A
Koudymov, A
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: A. Tarakji et al., Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors, APPL PHYS L, 78(15), 2001, pp. 2169-2171
Authors:
Khan, MA
Hu, X
Tarakji, A
Simin, G
Yang, J
Gaska, R
Shur, MS
Citation: Ma. Khan et al., AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates, APPL PHYS L, 77(9), 2000, pp. 1339-1341