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Results: 1-25/26
Authors:
Rao, BV
Gruznev, DV
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Structural transformations during Sb adsorption on Si(111)-In(4 x 1) reconstruction, JPN J A P 1, 40(6B), 2001, pp. 4304-4308
Authors:
Mori, M
Tsukada, K
Islam, OABM
Tambo, T
Tatsuyama, C
Ito, T
Citation: M. Mori et al., Interface formation between S/GaS and diamond films, NEW DIAM FR, 11(5), 2001, pp. 331-338
Authors:
Rao, BV
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth method, SEMIC SCI T, 16(4), 2001, pp. 216-221
Authors:
Rahman, MM
Matada, H
Tambo, T
Tatsuyama, C
Citation: Mm. Rahman et al., Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(001) substrates, APPL SURF S, 175, 2001, pp. 6-11
Authors:
Rao, BV
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Sb adsorption on Si(111)-In(4 x 1) surface phase, APPL SURF S, 175, 2001, pp. 187-194
Authors:
Rao, BV
Gruznev, D
Mori, M
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Twinned InSb molecular layer on Si(111) substrate, SURF SCI, 493(1-3), 2001, pp. 373-380
Authors:
Rao, BV
Atoji, M
Li, DM
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., How Si(001)-4 x 3-In reconstruction improves the epitaxial quality of InSbfilms grown on Si(001) substrates, SURF SCI, 493(1-3), 2001, pp. 405-413
Authors:
Rao, BV
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Growth of high-quality InSb films on Si(111) substrates without buffer layers, J CRYST GR, 224(3-4), 2001, pp. 316-322
Authors:
Rahman, MM
Matada, H
Tambo, T
Tatsuyama, C
Citation: Mm. Rahman et al., Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Si-m/Ge-n)(N) superlattices, J APPL PHYS, 90(1), 2001, pp. 202-208
Authors:
Rao, BV
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Effect of In(4 x 1) reconstruction induced interface modification on the growth behavior of InSb on Si(111) substrate, JPN J A P 1, 39(7A), 2000, pp. 3935-3942
Authors:
Tambo, T
Shimizu, A
Matsuda, A
Tatsuyama, C
Citation: T. Tambo et al., In-situ annealing of thin SrO films grown on Si(001)-2 x 1 by molecular beam epitaxy, JPN J A P 1, 39(11), 2000, pp. 6432-6434
Authors:
Rao, BV
Okamoto, T
Shinmura, A
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate, APPL SURF S, 162, 2000, pp. 263-269
Authors:
Tambo, T
Arakawa, T
Shimizu, A
Hori, S
Tatsuyama, C
Citation: T. Tambo et al., Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy, APPL SURF S, 159, 2000, pp. 161-166
Authors:
Mori, M
Nizawa, Y
Nishi, Y
Mae, K
Tambo, T
Tatsuyama, C
Citation: M. Mori et al., Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current, APPL SURF S, 159, 2000, pp. 328-334
Authors:
Rao, BV
Okamoto, T
Shinmura, A
Gruznev, D
Mori, M
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Growth temperature effect on the heteroepitaxy of InSb on Si(111), APPL SURF S, 159, 2000, pp. 335-340
Authors:
Islam, ABMO
Nishiyama, Y
Tambo, T
Tatsuyama, C
Ito, T
Citation: Abmo. Islam et al., Characterization of GaS-deposited CVD diamond films by AES and XPS, APPL SURF S, 159, 2000, pp. 588-593
Authors:
Islam, ABMO
Tambo, T
Tatsuyama, C
Citation: Abmo. Islam et al., Passivation of GaAs surface by GaS, VACUUM, 59(4), 2000, pp. 894-899
Authors:
Tatsuyama, C
Asano, T
Nakao, T
Matada, H
Tambo, T
Ueba, H
Citation: C. Tatsuyama et al., Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate, THIN SOL FI, 369(1-2), 2000, pp. 161-166
Authors:
Islam, ABMO
Nishiyama, Y
Tambo, T
Tatsuyama, C
Ito, T
Citation: Abmo. Islam et al., Interface formation between GaS and CVD diamond films, SURF SCI, 448(1), 2000, pp. 1-10
Authors:
Rao, BV
Gruznev, D
Tambo, T
Tatsuyama, C
Citation: Bv. Rao et al., Growth-temperature-dependent role of In(4x1) surface phase for the heteroepitaxy of InSb on Si(111), J APPL PHYS, 87(2), 2000, pp. 724-729
Authors:
Asano, T
Nakao, T
Matada, H
Tambo, T
Ueba, H
Tatsuyama, C
Citation: T. Asano et al., Structural characterization of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates, J APPL PHYS, 87(12), 2000, pp. 8759-8765
Authors:
Tambo, T
Maeda, K
Shimizu, A
Tatsuyama, C
Citation: T. Tambo et al., Improvement of electrical properties of epitaxial SrTiO3 films on Si(001)-2x1 by in situ annealing, J APPL PHYS, 86(6), 1999, pp. 3213-3217
Authors:
Islam, ABMO
Tambo, T
Tatsuyama, C
Citation: Abmo. Islam et al., Growth temperature dependence of GaS thin films on GaAs (001) surface, J APPL PHYS, 85(8), 1999, pp. 4003-4009
Authors:
Islam, ABMO
Lim, KK
Dokai, Y
Tambo, T
Tatsuyama, C
Jiang, N
Hatta, A
Ito, T
Hiraki, A
Citation: Abmo. Islam et al., Surface modification of B-doped diamond films by GaS, DIAM FILM T, 8(4), 1998, pp. 271-280
Authors:
Mori, M
Nizawa, Y
Nishi, Y
Tambo, T
Tatsuyama, C
Citation: M. Mori et al., Growth temperature effect on the heteroepitaxy of InSb films on a Si(001) substrate covered with Ge islands, THIN SOL FI, 333(1-2), 1998, pp. 60-64