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Results: 1-13 |
Results: 13

Authors: Teii, K
Citation: K. Teii, Soft ion impact for surface activation during diamond chemical-vapor deposition on diamond and silicon - art. no. 125327, PHYS REV B, 6412(12), 2001, pp. 5327

Authors: Teii, K Hori, M Goto, T
Citation: K. Teii et al., Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond, J APPL PHYS, 89(9), 2001, pp. 4714-4718

Authors: Teii, K Hori, M Goto, T
Citation: K. Teii et al., Negative bias dependence of sulfur and fluorine incorporation in diamond films etched by an SF6 plasma, J ELCHEM SO, 148(2), 2001, pp. G55-G58

Authors: Teii, K Hori, M Goto, T
Citation: K. Teii et al., Codeposition on diamond film surface during reactive ion etching in SF6 and O-2 plasmas, J VAC SCI A, 18(6), 2000, pp. 2779-2784

Authors: Teii, K Hori, M Ito, M Goto, T Ishii, N
Citation: K. Teii et al., Study on polymeric neutral species in high-density fluorocarbon plasmas, J VAC SCI A, 18(1), 2000, pp. 1-9

Authors: Ito, H Teii, K Funakoshi, H Hori, M Goto, T Ito, M Takeo, T
Citation: H. Ito et al., Loss kinetics of carbon atoms in low-pressure high density plasmas, J APPL PHYS, 88(8), 2000, pp. 4537-4541

Authors: Teii, K Ito, H Hori, M Takeo, T Goto, T
Citation: K. Teii et al., Kinetics and role of C, O, and OH in low-pressure nanocrystalline diamond growth, J APPL PHYS, 87(9), 2000, pp. 4572-4579

Authors: Teii, K Hori, M Goto, T Ishii, N
Citation: K. Teii et al., Precursors of fluorocarbon film growth studied by mass spectrometry, J APPL PHYS, 87(10), 2000, pp. 7185-7190

Authors: Ito, K Teii, K Ishikawa, M Ito, M Hori, M Takeo, T Kato, T Goto, T
Citation: K. Ito et al., Diamond deposition and behavior of atomic carbon species in a low-pressureinductively coupled plasma, JPN J A P 1, 38(7B), 1999, pp. 4504-4507

Authors: Teii, K
Citation: K. Teii, Diagnostics of the diamond depositing inductively coupled plasma by electrostatic probes and optical emission spectroscopy, J VAC SCI A, 17(1), 1999, pp. 138-143

Authors: Teii, K Yoshida, T
Citation: K. Teii et T. Yoshida, Lower pressure limit of diamond growth in inductively coupled plasma, J APPL PHYS, 85(3), 1999, pp. 1864-1870

Authors: Teii, K
Citation: K. Teii, Independent control of ion energy and flux in plasma-enhanced diamond growth, APPL PHYS L, 74(26), 1999, pp. 4067-4069

Authors: Teii, K
Citation: K. Teii, Structure changes in a-C : H films in inductive CH4/Ar plasma deposition, THIN SOL FI, 333(1-2), 1998, pp. 103-107
Risultati: 1-13 |